2

Notes:

a. Pulse test; pulse width

 300 µs, duty cycle  2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Static

Drain-Source Breakdown Voltage

30

V

V

35

mV/°C

V

- 7.5

Gate-Source Threshold Voltage

1.5

2.5

V

Gate-Source Leakage

± 100

nA

Zero Gate Voltage Drain Current

1

µA

10

90

A

0.0024

0.0029



0.0027

0.0033

160

S

Input Capacitance

12065

pF

Output Capacitance

1725

Reverse Transfer Capacitance

970

Total Gate Charge

171

257

nC

81.5

123

Gate-Source Charge

34

Gate-Drain Charge

29

Gate Resistance

f = 1 MHz

1.4

2.1



Turn-On Delay Time

18

27

ns

Rise Time

11

17

Turn-Off Delay Time

70

105

Fall Time

10

15

Turn-On Delay Time

55

83

Rise Time

180

270

Turn-Off Delay Time

55

83

Fall Time

12

18

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

90

A

90

Body Diode Voltage

0.8

1.2

V

Body Diode Reverse Recovery Time

52

78

ns

Body Diode Reverse Recovery Charge

70.2

105

nC

Reverse Recovery Fall Time

27

ns

Reverse Recovery Rise Time

25

D

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