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AO4886 Datasheet(PDF) 2 Page - Alpha & Omega Semiconductors |
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AO4886 Datasheet(HTML) 2 Page - Alpha & Omega Semiconductors |
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2 / 6 page  AO4886 Symbol Min Typ Max Units BVDSS 100 V VDS=100V, VGS=0V 1 TJ=55°C 5 IGSS ±100 nA VGS(th) Gate Threshold Voltage 1.6 2.2 2.7 V ID(ON) 17 A 63.5 80 TJ=125°C 122 152 70 91 m Ω gFS 20 S VSD 0.74 1 V IS 2.5 A Ciss 620 778 942 pF Coss 38 55 81 pF Crss 13 24 35 pF Rg 0.7 1.45 2.2 Ω Qg(10V) 13 16.3 20 nC Qg(4.5V) 6.4 8.1 10 nC Qgs 2.2 2.8 3.4 nC Qgd 2.4 4.1 5.8 nC tD(on) 6 ns t 2.5 ns Drain-Source Breakdown Voltage On state drain current ID=250µA, VGS=0V VGS=10V, VDS=5V VGS=10V, ID=3A Reverse Transfer Capacitance VGS=0V, VDS=50V, f=1MHz SWITCHING PARAMETERS VDS=VGS ID=250µA VDS=0V, VGS= ±20V Gate-Body leakage current Forward Transconductance Gate Drain Charge Total Gate Charge Electrical Characteristics (TJ=25°C unless otherwise noted) STATIC PARAMETERS Parameter Conditions IDSS µA Zero Gate Voltage Drain Current RDS(ON) Static Drain-Source On-Resistance m Ω IS=1A,VGS=0V VDS=5V, ID=3A VGS=4.5V, ID=3A Diode Forward Voltage Maximum Body-Diode Continuous Current Input Capacitance Output Capacitance Turn-On DelayTime DYNAMIC PARAMETERS Turn-On Rise Time V =10V, V =50V, R =16.7 Ω, Gate resistance VGS=0V, VDS=0V, f=1MHz Total Gate Charge VGS=10V, VDS=50V, ID=3A Gate Source Charge tr 2.5 ns tD(off) 21 ns tf 2.4 ns trr 14 21 28 ns Qrr 65 94 123 nC THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Body Diode Reverse Recovery Time IF=3A, dI/dt=500A/µs Body Diode Reverse Recovery Charge IF=3A, dI/dt=500A/µs Turn-On Rise Time Turn-Off DelayTime VGS=10V, VDS=50V, RL=16.7Ω, RGEN=3Ω Turn-Off Fall Time A. The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation P D is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature T J(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialT J=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of T J(MAX)=150°C. The SOA curve provides a single pulse rating. Rev 0: Sep 2010 www.aosmd.com Page 2 of 6 |
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