DTS03K16 datasheet(2/8 Pages) DINTEK

Part #	DTS03K16

Description	N-Channel16 ?뭋 (D?뭆) MOSFET

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Manufacturer	DINTEK [DinTek Semiconductor Co,.Ltd]

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SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)

Limits

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Static

Drain-Source Breakdown Voltage

V(BR)DSS

VGS = 0 V, ID = 10 mA

16

V

Gate-Threshold Voltage

VGS(th)

VDS = VGS, ID = 0.25 mA

1.0

2.0

3.0

V

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = "20 V

"100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = 16 V, VGS = 0 V

1

mA

Zero Gate Voltage Drain Current

IDSS

VDS = 16 V, VGS = 0 V, TJ = 55_C

10

mA

On State Drain Currenta

ID( )

VDS = 10 V VGS = 10 V

DTS03K16

0.5

A

On-State Drain Currenta

ID(on)

VDS = 10 V, VGS = 8 V

DTS03K16A

0.8

A

Drain-Source On-Resistancea

rDS(on)

VGS = 4.5 V, ID = 0.1 A

0.8

1.4

W

Drain-Source On-Resistancea

rDS(on)

VGS = 10 V, ID = 0.3 A

0.47

1.0

W

Forward Transconductancea

gfs

VDS = 10 V, ID = 0.3 A

550

mS

Diode Forward Voltage

VSD

IS = 0.3 A, VGS = 0 V

0.85

1.2

V

Dynamicb

Total Gate Charge

Qg

1000

1500

Gate-Source Charge

Qgs

VDS = 16 V, VGS = 10 V

ID ^ 0.3 A

205

pC

Gate-Drain Charge

Qgd

ID ^ 0.3 A

200

Gate Resistance

Rg

48

W

Turn On Time

td(on)

4.5

8

Turn-On Time

tr

VDD = 15 V, RL = 50 W

ID ^ 03 A VGEN = 10 V

8

15

ns

Turn-Off Time

td(off)

ID ^ 0.3 A, VGEN = 10 V

RG = 6 W

9

15

ns

Turn-Off Time

tf

6.3

12

Notes

a.

Pulse test: PW v300 ms duty cycle v2%.

b.

Guaranteed by design, not subject to production testing.

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

0.0

0.2

0.4

0.6

0.8

1.0

012345

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.0

0.4

0.8

1.2

1.6

2.0

VGS = 10 thru 5 V

TJ = 125_C

−55_C

3 V

25_C

Output Characteristics

Transfer Characteristics

VDS − Drain-to-Source Voltage (V)

VGS − Gate-to-Source Voltage (V)

4 V

2 V

DTS

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daysemi.jp

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