AO4852

Symbol

Min

Typ

Max

Units

60

V

1

5

100

nA

1.7

2.3

2.6

V

20

A

79

90

146

159

86

105

m

Ω

15

S

0.8

1

V

20

A

2.5

A

372

450

pF

31

pF

17

pF

1.7

2.6

Ω

7.1

9.2

nC

3.6

nC

1

nC

2

nC

4.1

5.3

ns

2.1

ns

15

ns

2.1

ns

23.4

29

ns

23.2

nC

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE

Gate Drain Charge

Reverse Transfer Capacitance

SWITCHING PARAMETERS

m

Ω

Static Drain-Source On-Resistance

Forward Transconductance

Diode Forward Voltage

µA

Gate Threshold Voltage

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Body leakage current

STATIC PARAMETERS

Parameter

Conditions

Pulsed Body-Diode Current

B

Body Diode Reverse Recovery Time

Gate resistance

Output Capacitance

Turn-On DelayTime

DYNAMIC PARAMETERS

Total Gate Charge

On state drain current

Maximum Body-Diode Continuous Current

Input Capacitance

Total Gate Charge

Gate Source Charge

Turn-On Rise Time

Turn-Off DelayTime

Turn-Off Fall Time

value in any given application depends on the user's specific board design.

B: Repetitive rating, pulse width limited by junction temperature.

D. The static characteristics in Figures 1 to 6 are obtained using < 300

µs pulses, duty cycle 0.5% max.

E. These tests are performed with the device mounted on 1 in

curve provides a single pulse rating.

Rev1: Nov. 2010

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com