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DTM4415 Datasheet(PDF) 1 Page - DinTek Semiconductor Co,.Ltd |
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DTM4415 Datasheet(HTML) 1 Page - DinTek Semiconductor Co,.Ltd |
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1 / 9 page  1 P-Channel 30-V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Available •TrenchFET® Power MOSFET • 100 % Rg Tested • 100 % UIS Tested APPLICATIONS • Load Switches - Notebook PCs - Desktop PCs PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) d Qg (Typ.) - 30 0.018 at VGS = - 10 V - 13 22 nC 0.030 at VGS = - 4.5 V - 10 Notes: a. Surface mounted on 1" x 1" FR4 board. b. t = 10 s. c. Maximum under Steady State conditions is 85 °C/W. d. Based on TC = 25 °C. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage VDS - 30 V Gate-Source Voltage VGS ± 25 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID - 13 A TC = 70 °C - 10.5 TA = 25 °C - 8.7a, b TA = 70 °C - 7.7a, b Pulsed Drain Current IDM - 50 Continuous Source-Drain Diode Current TC = 25 °C IS - 4.6 TA = 25 °C 2.0a, b Avalanche Current L = 0.1 mH IAS - 20 Single-Pulse Avalanche Energy EAS 20 mJ Maximum Power Dissipation TC = 25 °C PD 5.6 W TC = 70 °C 3.6 TA = 25 °C 2.5a, b TA = 70 °C 1.6a, b Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambienta, c t ≤ 10 s RthJA 39 50 °C/W Maximum Junction-to-Foot Steady State RthJF 18 22 S G D P-Channel MOSFET S S D D D S G D SO-8 5 6 7 8 Top View 2 3 4 1 DT www. daysemi.jp |
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Similar Description - DTM4415 |
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