2

Note

a. When mounted on 1" square PCB (FR-4 or G-10 material).

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. Pulse width

≤ 300 μs; duty cycle ≤ 2 %.

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

MIN.

TYP.

MAX.

UNIT

Maximum Junction-to-Ambient

-

-

110

°C/W

Maximum Junction-to-Ambient

--

50

Maximum Junction-to-Case (Drain)

--

3.0

SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static

Drain-Source Breakdown Voltage

600

-

-

V

ΔV

-

0.88

-

V/°C

Gate-Source Threshold Voltage

2.0

-

4.0

V

Gate-Source Leakage

-

-

± 100

nA

Zero Gate Voltage Drain Current

-

-

100

μA

-

-

500

Drain-Source On-State Resistance

--

4.4

Ω

Forward Transconductance

1.4

-

-

S

Dynamic

Input Capacitance

f = 1.0 MHz, see fig. 5

-

350

-

pF

Output Capacitance

-48

-

Reverse Transfer Capacitance

-8.6

-

Total Gate Charge

--

18

nC

Gate-Source Charge

--

3.0

Gate-Drain Charge

--

8.9

Turn-On Delay Time

-10

-

ns

Rise Time

-23

-

Turn-Off Delay Time

-30

-

Fall Time

-25

-

Internal Drain Inductance

Between lead,

6 mm (0.25") from

package and center of

die contact

-4.5

-

nH

Internal Source Inductance

-7.5

-

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

MOSFET symbol

showing the

integral reverse

p - n junction diode

--

2.0

A

--

8.0

Body Diode Voltage

--

1.6

V

Body Diode Reverse Recovery Time

-

290

580

ns

Body Diode Reverse Recovery Charge

-

0.67

1.3

μC

Forward Turn-On Time

D

S

G

S

D

G

D

www.

daysemi.jp