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CYRS1049DV33 Datasheet(PDF) 1 Page - Cypress Semiconductor

Part # CYRS1049DV33
Description  4-Mbit (512 K 횞 8) Static RAM
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Manufacturer  CYPRESS [Cypress Semiconductor]
Direct Link  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor

CYRS1049DV33 Datasheet(HTML) 1 Page - Cypress Semiconductor

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CYRS1049DV33
4-Mbit (512 K × 8) Static RAM
with RadStop™ Technology
Cypress Semiconductor Corporation
198 Champion Court
San Jose
, CA 95134-1709
408-943-2600
Document Number: 001-64292 Rev. *C
Revised March 19, 2012
4-Mbit (512 K × 8) Static RAM with RadStop™ Technology
Radiation Performance
Radiation Data
Total dose 300 Krad
Soft
error
rate
(both
heavy
ion
and
proton)
Heavy ions
 1×10-10 upsets/bit-day
with
single-error
correction, double error detection error detection and
correction (SEC-DED EDAC)
❥ Neutron = 2.0 × 1014 N/cm2
Dose rate > 2.0 × 109 (rad(Si)/s)
Latch up immunity LET = 120 MeV.cm2/mg (125 C)
Processing Flows
V grade - Class V flow in compliance with MIL-PRF 38535
Prototyping Options
Non
qualified
manufacturers
list
(QML)
V
grade
CYPT1049DV33 devices with same functional and timing
characteristics in a 36-pin ceramic flat package
Features
Temperature ranges
Military/Space: –55 °C to 125 °C
High speed
tAA = 12 ns
Low active power
ICC = 95 mA at 12 ns (PMAX = 315 mW)
Low CMOS standby power
ISB2 = 15 mA
2.0 V data retention
Automatic power-down when deselected
Transistor-transistor logic (TTL) compatible inputs and outputs
Easy memory expansion with CE and OE features
Available in Pb-free 36-pin ceramic flat package
A0
IO0
IO7
IO1
IO2
IO3
IO4
IO5
IO6
A1
A2
A3
A4
A5
A6
A7
A8
A9
POWER
DOWN
CE
WE
OE
COLUMN DECODER
512K x 8
ARRAY
INPUT BUFFER
A10
I/O7
I/O6
I/O5
I/O4
I/O3
I/O2
I/O1
I/O0
Logic Block Diagram


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