AO4410_10 datasheet(2/5 Pages) AOSMD

Part #	AO4410

Description	30V N-Channel MOSFET

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Manufacturer	AOSMD [Alpha & Omega Semiconductors]

Direct Link	http://www.aosmd.com

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2 / 5 page

Symbol

Min

Typ

Max

Units

BVDSS

30

V

1

TJ=55°C

5

IGSS

100

nA

VGS(th)

0.8

1.1

1.5

V

ID(ON)

80

A

4.7

5.5

TJ=125°C

6.4

7.4

5.2

6.2

m

Ω

gFS

102

S

VSD

0.64

1

V

IS

4.5

A

Ciss

9130

10500

pF

Coss

625

pF

Crss

387

542

pF

Rg

0.2

0.4

0.8

Ω

Qg(4.5V)

72.4

85

nC

Qgs

13.4

nC

Qgd

16.8

nC

tD(on)

11

15

ns

tr

7

11

ns

tD(off)

99

135

ns

tf

13

19.5

ns

trr

33

40

ns

Qrr

22.2

30

nC

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Gate Drain Charge

VGS=0V, VDS=15V, f=1MHz

SWITCHING PARAMETERS

Total Gate Charge

Gate Source Charge

Gate resistance

VGS=0V, VDS=0V, f=1MHz

VGS=10V, VDS=15V, ID=18A

Turn-On Rise Time

Turn-Off DelayTime

VGS=10V, VDS=15V, RL=0.83Ω,

RGEN=3Ω

Turn-Off Fall Time

Turn-On DelayTime

m

Ω

VGS=4.5V, ID=15A

IS=1A,VGS=0V

VDS=5V, ID=18A

Maximum Body-Diode Continuous Current

Input Capacitance

Output Capacitance

DYNAMIC PARAMETERS

RDS(ON)

Static Drain-Source On-Resistance

Forward Transconductance

Diode Forward Voltage

IDSS

µA

Gate Threshold Voltage

VDS=VGS ID=250µA

VDS=30V, VGS=0V

VDS=0V, VGS= ±12V

Zero Gate Voltage Drain Current

Gate-Body leakage current

Electrical Characteristics (TJ=25°C unless otherwise noted)

STATIC PARAMETERS

Parameter

Conditions

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge IF=18A, dI/dt=100A/µs

Drain-Source Breakdown Voltage

On state drain current

ID=250µA, VGS=0V

VGS=4.5V, VDS=5V

VGS=10V, ID=18A

Reverse Transfer Capacitance

IF=18A, dI/dt=100A/µs

A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with

T A=25°C. The value in any given application depends on the user's specific board design.

B: Repetitive rating, pulse width limited by junction temperature.

C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.

D. The static characteristics in Figures 1 to 6 are obtained using <300

µs pulses, duty cycle 0.5% max.

E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The

SOA curve provides a single pulse rating.

F. The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.

Rev7: Nov 2010

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

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