MJD122 datasheet(3/8 Pages) MOTOROLA

Part #	MJD122

Description	SILICON POWER TRANSISTORS 8 AMPERES 100 VOLTS 20 WATT

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Manufacturer	MOTOROLA [Motorola, Inc]

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MJD122 MJD127

3

Motorola Bipolar Power Transistor Device Data

IC, COLLECTOR CURRENT (AMP)

500

0.2

5000

2000

10,000

0.1

0.7

3000

0.5

1

20,000

1000

2

3

5

3

IB, BASE CURRENT (mA)

2.6

2.2

1.8

1.4

0.3

0.5

1

7

3

5

2

1

IC, COLLECTOR CURRENT (AMP)

2

1.5

3

2.5

1

0.5

0.2

3

0.1

0.7

0.3

1

5

10

20 30

200

300

0.3

7

10

0.7

0.5

7

2

10

PNP MJD127

NPN MJD122

IC, COLLECTOR CURRENT (AMP)

500

0.2

5000

2000

10,000

VCE = 4 V

TJ = 150°C

7000

0.1

0.7

25

°C

– 55

°C

3000

0.5

1

20,000

700

1000

2

3

5

3

IB, BASE CURRENT (mA)

2.6

2.2

1.8

1.4

0.3

0.5

1

7

3

5

4 A

IC = 2 A

2

TJ = 25°C

1

IC, COLLECTOR CURRENT (AMP)

2

1.5

3

2.5

1

0.5

TJ = 25°C

VBE(sat) @ IC/IB = 250

VBE @ VCE = 4 V

VCE(sat) @ IC/IB = 250

0.2

3

0.1

0.7

0.3

1

5

10

20

30

Figure 2. DC Current Gain

Figure 3. Collector Saturation Region

Figure 4. “On” Voltages

200

300

0.3

7

10

0.7

0.5

7

2

10

6 A

VCE = 4 V

TJ = 150°C

25

°C

– 55

°C

TJ = 25°C

4 A

IC = 2 A

6 A

TJ = 25°C

VBE @ VCE = 4 V

VBE(sat) @ IC/IB = 250

VCE(sat) @ IC/IB = 250

TYPICAL ELECTRICAL CHARACTERISTICS

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