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MJ2500 MJ2501 MJ3000 MJ3001 2 Motorola Bipolar Power Transistor Device Data ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage(1) MJ2500, MJ3000 (IC = 100 mAdc, IB = 0) MJ2501, MJ3001 V(BR)CEO 60 80 — — Vdc Collector–Emitter Leakage Current (VEB = 60 Vdc, RBE = 1.0 k ohm) MJ2500, MJ3000 (VEB = 80 Vdc, RBE = 1.0 k ohm) MJ2501, MJ3001 (VEB = 60 Vdc, RBE = 1.0 k ohm, TC = 150_C) MJ2500, MJ3000 (VEB = 80 Vdc, RBE = 1.0 k ohm, TC = 150_C) MJ2501, MJ3001 ICER — — — — 1.0 1.0 5.0 5.0 mAdc Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO — 2.0 mAdc Collector Emitter Leakage Current (VCE = 30 Vdc, IB = 0) MJ2500, MJ3000 (VCE = 40 Vdc, IB = 0) MJ2501, MJ3001 ICEO — — 1.0 1.0 mAdc ON CHARACTERISTICS(1) DC Current Gain (IC = 5.0 Adc, VCE = 3.0 Vdc) hFE 1000 — — Collector–Emitter Saturation Voltage (IC = 5.0 Adc, IB = 20 mAdc) (IC = 10 Adc, IB = 50 mAdc) VCE(sat) — — 2.0 4.0 Vdc Base Emitter Voltage (IC = 5.0 Adc, VCE = 3.0 Vdc) VBE(on) — 3.0 Vdc (1)Pulse Test: Pulse Width v 300 µs, Duty Cycle v 2.0%. Figure 2. DC Current Gain IC, COLLECTOR CURRENT (AMP) 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 10 TJ = 150°C 25 °C – 55 °C VCE = 3.0 Vdc 500 200 100 50,000 5000 20,000 2000 1000 10,000 5.0 Figure 3. Small–Signal Current Gain f, FREQUENCY (Hz) 500 300 100 3000 200 2000 1000 30 50 TC = 25°C VCE = 3.0 Vdc IC = 5.0 Adc 104 103 105 106 50 IC, COLLECTOR CURRENT (AMP) VBE(sat) @ IC/IB = 250 Figure 4. “On” Voltages VCE(sat) @ IC/IB = 250 TJ = 25°C VBE @ VCE = 3.0 V 0.01 0.2 0.5 0.05 1.0 2.0 10 5.0 3.5 2.5 2.0 1.5 1.0 0 SECONDARY BREAKDOWN LIMITED THERMALLY LIMITED @ TC = 25°C BONDING WIRE LIMITED 10 1.0 Figure 5. DC Safe Operating Area 7.0 2.0 10 20 100 TJ = 200°C 0.2 3.0 0.5 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) 5.0 30 70 1.0 0.1 2.0 50 3.0 5.0 7.0 MJ2500, MJ3000 MJ2501, MJ3001 0.5 3.0 0.1 0.02 0.7 0.3 There are two limitations on the power handling ability of a transistor: junction temperature and secondary breakdown. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation; e.g., the transistor must not be subjected to greater dissipation than the curves indicate. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limita- tions imposed by secondary breakdown. |
