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MJ2500 Datasheet (HTML) - Motorola, Inc

Part No. MJ2500
Description  10 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 60.80 VOLTS 150 WATTS
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Maker  MOTOROLA [Motorola, Inc]
Homepage  http://www.freescale.com
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 2 page
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MJ2500 MJ2501 MJ3000 MJ3001
2
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(1)
MJ2500, MJ3000
(IC = 100 mAdc, IB = 0)
MJ2501, MJ3001
V(BR)CEO
60
80
Vdc
Collector–Emitter Leakage Current
(VEB = 60 Vdc, RBE = 1.0 k ohm)
MJ2500, MJ3000
(VEB = 80 Vdc, RBE = 1.0 k ohm)
MJ2501, MJ3001
(VEB = 60 Vdc, RBE = 1.0 k ohm, TC = 150_C)
MJ2500, MJ3000
(VEB = 80 Vdc, RBE = 1.0 k ohm, TC = 150_C)
MJ2501, MJ3001
ICER
1.0
1.0
5.0
5.0
mAdc
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)
IEBO
2.0
mAdc
Collector Emitter Leakage Current (VCE = 30 Vdc, IB = 0)
MJ2500, MJ3000
(VCE = 40 Vdc, IB = 0)
MJ2501, MJ3001
ICEO
1.0
1.0
mAdc
ON CHARACTERISTICS(1)
DC Current Gain (IC = 5.0 Adc, VCE = 3.0 Vdc)
hFE
1000
Collector–Emitter Saturation Voltage (IC = 5.0 Adc, IB = 20 mAdc)
(IC = 10 Adc, IB = 50 mAdc)
VCE(sat)
2.0
4.0
Vdc
Base Emitter Voltage (IC = 5.0 Adc, VCE = 3.0 Vdc)
VBE(on)
3.0
Vdc
(1)Pulse Test: Pulse Width v 300 µs, Duty Cycle v 2.0%.
Figure 2. DC Current Gain
IC, COLLECTOR CURRENT (AMP)
0.01 0.02
0.05
0.1
0.2
0.5
1.0
2.0
10
TJ = 150°C
25
°C
– 55
°C
VCE = 3.0 Vdc
500
200
100
50,000
5000
20,000
2000
1000
10,000
5.0
Figure 3. Small–Signal Current Gain
f, FREQUENCY (Hz)
500
300
100
3000
200
2000
1000
30
50
TC = 25°C
VCE = 3.0 Vdc
IC = 5.0 Adc
104
103
105
106
50
IC, COLLECTOR CURRENT (AMP)
VBE(sat) @ IC/IB = 250
Figure 4. “On” Voltages
VCE(sat) @ IC/IB = 250
TJ = 25°C
VBE @ VCE = 3.0 V
0.01
0.2
0.5
0.05
1.0
2.0
10
5.0
3.5
2.5
2.0
1.5
1.0
0
SECONDARY BREAKDOWN LIMITED
THERMALLY LIMITED @ TC = 25°C
BONDING WIRE LIMITED
10
1.0
Figure 5. DC Safe Operating Area
7.0
2.0
10
20
100
TJ = 200°C
0.2
3.0
0.5
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
5.0
30
70
1.0
0.1
2.0
50
3.0
5.0 7.0
MJ2500, MJ3000
MJ2501, MJ3001
0.5
3.0
0.1
0.02
0.7
0.3
There are two limitations on the power handling ability of a
transistor: junction temperature and secondary breakdown.
Safe operating area curves indicate IC – VCE limits of the
transistor that must be observed for reliable operation; e.g.,
the transistor must not be subjected to greater dissipation
than the curves indicate.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the limita-
tions imposed by secondary breakdown.



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