Product Specifications

PART NO.:

VL47B5663A-F8SE

REV: 1.0

Tel 949.888.2444 – 30052 Tomas, Rancho Santa Margarita, CA 92688 USA –

www.virtium.com

1

General Information

2GB 256Mx64 DDR3 SDRAM NON-ECC UNBUFFERED SODIMM 204-PIN

Description

The VL47B5663A is a 256Mx64 DDR3 SDRAM high density SODIMM. This dual rank memory module consists of

sixteen CMOS 128Mx8 bits with 8 banks DDR3 Synchronous DRAMs in BGA packages and a 2K EEPROM with

thermal sensor in an 8-pin MLF package. This module is a 204-pin small-outline dual in-line memory module and is

intended for mounting into an edge connector socket. Decoupling capacitors are mounted on the printed circuit board

for each DDR3 SDRAM.

Features

Pin Description

- Industrial (-40

Notes: Double refresh rate is required when 85

Pin Name

Function

A0~A13

Address Inputs

A10/AP

Address Input/ Autoprecharge

A12/BC#

Address Input/ Burst Chop

BA0~BA2

Bank Address Inputs

DQ0~DQ63

Data Input/Output

DQS0~DQS7

Data Strobes

DQS0#~DQS7#

Data Strobes Complement

DM0~DM7

Data Masks

CK0, CK0#,

CK1, CK1#

Clock Inputs

ODT0, ODT1

On-die Termination Control

CKE0, CKE1

Clock Enables

CS0#, CS1#

Chip Selects

RAS#

Row Address Strobes

CAS#

Column Address Strobes

WE#

Write Enable

RESET#

Register and SDRAM Control

VDD

Voltage Supply

VSS

Ground

SA0~SA1

SPD Address

SDA

SPD Data Input/Output

SCL

SPD Clock Input

EVENT#

Temperature Event Output

VREFCA

Reference Voltage for CA

VREFDQ

Reference Voltage for DQ

VDDSPD

SPD Voltage Supply

VTT

Termination Voltage

NC

No Connect

Order Information:

VL47B5663A - F8 S E - X

OPERATING TEMPERATURE

None: Commercial

S1:

Industrial screening

DRAM DIE

E-DIE

DRAM MANUFACTURER

S - SAMSUNG

MODULE SPEED

F8: PC3-8500 @ CL7

VL: Lead-free/RoHS

DRAM component: Samsung K4B1G0846E-BCH9