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TJA1029 Datasheet(PDF) 11 Page - NXP Semiconductors |
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TJA1029 Datasheet(HTML) 11 Page - NXP Semiconductors |
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11 / 24 page  TJA1029 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved. Product data sheet Rev. 1 — 8 January 2013 11 of 24 NXP Semiconductors TJA1029 LIN 2.2A/SAE J2602 transceiver with TXD dominant timeout 10. Static characteristics Table 7. Static characteristics VBAT = 5 V to 18 V; Tvj = 40 C to +150 C; RL(LIN-VBAT) = 500 ; all voltages are referenced to pin GND; positive currents flow into the IC; typical values are given at VBAT = 12 V; unless otherwise specified.[1] Symbol Parameter Conditions Min Typ Max Unit Supply VBAT battery supply voltage 5 - 18 V IBAT battery supply current Sleep mode; bus recessive; VLIN =VBAT; VSLP_N =0V 2.5 7 10 A Sleep mode; bus dominant; VLIN = 0 V; VBAT = 12 V; VSLP_N =0V 150 400 1200 A Standby mode; bus recessive; VLIN =VBAT; VSLP_N =0V 2.5 7 10 A Standby mode; bus dominant; VLIN = 0 V; VBAT = 12 V; VSLP_N =0V [2] 100 300 1000 A Normal mode; bus recessive; VLIN =VBAT; VSLP_N =5V; VTXD =5V 200 800 1600 A Normal mode; bus dominant; VTXD =0V; VSLP_N =5V; VBAT = 12 V 12 4 mA Undervoltage reset Vth(POR)L LOW-level power-on reset threshold voltage power-on reset 1.6 3.1 3.9 V Vth(POR)H HIGH-level power-on reset threshold voltage 2.3 3.4 4.3 V Vhys(POR) power-on reset hysteresis voltage [2] 0.05 0.3 1 V Vth(VBATL)L LOW-level VBAT LOW threshold voltage 3.9 4.4 4.7 V Vth(VBATL)H HIGH-level VBAT LOW threshold voltage 4.2 4.7 4.9 V Vhys(VBATL) VBAT LOW hysteresis voltage [2] 0.15 0.3 0.6 V Pins TXD and SLP_N VIH HIGH-level input voltage 2 - 7 V VIL LOW-level input voltage 0.3 - +0.8 V Vhys hysteresis voltage [2] 50 200 400 mV Rpd pull-down resistance on TXD 50 125 325 k on SLP_N 100 250 650 k Pin RXD (open-drain) IOL LOW-level output current VRXD =0.4 V 2 - - mA ILH HIGH-level leakage current [2] 5- +5 A |
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