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H8205 Datasheet(PDF) 1 Page - Hi-Sincerity Mocroelectronics |
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H8205 Datasheet(HTML) 1 Page - Hi-Sincerity Mocroelectronics |
1 / 4 page HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200904 Issued Date : 2009.02.27 Revised Date : 2010.07.02 Page No. : 1/4 H8205 HSMC Product Specification H8205 Dual N-Channel Enhancement-Mode MOSFET (20V, 6A) Description This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced trench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V-10V) Features R DS(on)=40m@VGS=2.5V, ID=5.2A; RDS(on)=25m@VGS=4.5V, ID=6A High Density Cell Design for Ultra Low On-Resistance High Power and Current Handing Capability Fully Characterized Avalanche Voltage and Current Ideal for Li ion Battery Pack Applications Applications Battery Protection Load Switch Power Management Absolute Maximum Ratings (T A=25 oC, unless otherwise noted) Symbol Parameter Ratings Units VDS Drain-Source Voltage 20 V VGS Gate-Source Voltage 8 V ID Drain Current 6 A IDM Drain Current (Pulsed) *1 30 A PD Total Power Dissipation @TA=25 oC 2 W Total Power Dissipation @TA=75 oC 1.3 W Tj, Tstg Operating and Storage Temperature Range -55 to +150 C RJA Thermal Resistance Junction to Ambient *2 62.5 C/W *1: Maximum DC current limited by the package *2: 1-in 2 2oz Cu PCB board Pin 1: Source 1 Pin 2: Drania 1 & 2 Pin 3: Source 2 Pin 4: Gate 2 Pin 5: Drania 1 & 2 Pin 6: Gate 1 H8205 Symbol & Pin Assignment 1 2 3 Q1 Q2 6 5 4 |
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