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A8584 Datasheet(PDF) 5 Page - Allegro MicroSystems |
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A8584 Datasheet(HTML) 5 Page - Allegro MicroSystems |
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5 / 32 page  Wide Input Voltage, 500 kHz, 2.5 A Asynchronous Buck Regulator A8584 5 Allegro MicroSystems, Inc. 115 Northeast Cutoff Worcester, Massachusetts 01615-0036 U.S.A. 1.508.853.5000; www.allegromicro.com ELECTRICAL CHARACTERISTICS1 Valid at VIN = 12 V, TA = 25°C , indicates specifications guaranteed through –40°C ≤ TJ ≤ 125°C; unless otherwise specified Characteristics Symbol Test Conditions Min. Typ.2 Max. Unit Input Voltage Specifications Operating Input Voltage Range VIN 4.7 − 36 V UVLO Start Threshold VINSTART VIN rising − 4.2 4.6 V UVLO Stop Threshold VINSTOP VIN falling − 3.8 4.2 V UVLO Hysteresis VUVLOHYS 280 400 520 mV Input Currents Input Quiescent Current IQ VEN/SYNC = 5 V, VFB = 1.5 V, no PWM switching − 3.0 5.0 mA Input Sleep Supply Current3 IQSLEEP VIN = 16 V, VEN/SYNC ≤ 0.4 V, TA = TJ between –40°C and 85°C −− 3.0 μA VIN = 16 V, VEN/SYNC ≤ 0.4 V, TA = TJ = 125°C − 515 μA Reference Voltage Feedback Voltage VFB 4.7 V < VIN < 36 V, VFB = VCOMP 788 800 812 mV Error Amplifier Feedback Input Bias Current IFB VCOMP = 1.5 V, VFB regulated so that ICOMP = 0 A − –150 –300 nA Open Loop Voltage Gain AVOL –56– dB Transconductance gm ICOMP = 0 μA, VSS > 700 mV 550 750 1000 μA/V 0 V < VSS < 700 mV – 225 – μA/V Source Current IEA(SRC) VFB < 0.8 V, VCOMP = 1.5 V − –50 −μA Sink Current IEA(SINK) VFB > 0.8 V, VCOMP = 1.5 V − +50 −μA Maximum Output Voltage VEAVO(max) 1.3 1.7 2.1 V COMP Pull-Down Resistance RCOMP FAULT = 1 − 1500 −Ω Pulse Width Modulation (PWM) PWM Ramp Offset V PWMOFFSET VCOMP for 0% duty cycle − 300 − mV Minimum Controllable On-Time tON(MIN) − 100 150 ns Minimum Switch Off-Time tOFF(MIN) − 100 150 ns COMP to SW Current Gain gmPOWER − 2.85 − A/V Slope Compensation SE fSW = 250 kHz − 0.19 − A/μs fSW = 500 kHz − 0.38 − A/μs MOSFET Parameters Hi-Side MOSFET On Resistance RDS(on)HS IDS = 400 mA, VBOOT − VSW = 6 V − 100 − mΩ High-Side MOSFET Leakage Current3 ILEAK VIN = 16 V, VEN/SYNC ≤ 0.4 V, VSW = 0 V TA = TJ between –40°C and 85°C −− 10 μA VIN = 16 V, VEN/SYNC ≤ 0.4 V, VSW = 0 V, TA = TJ = 125°C − 50 150 μA Low-Side MOSFET On Resistance RDS(on)LS IDS = 10 mA, (VBOOT – VSW) < 4 V − 10 12 Ω Continued on the next page… |
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