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AD261BND-1 Datasheet(PDF) 2 Page - Analog Devices |
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AD261BND-1 Datasheet(HTML) 2 Page - Analog Devices |
2 / 6 page –2– REV. 0 AD261–SPECIFICATIONS (Typical at T A = +25 C, +5 V dcSYS, +5 V dcFLD, tRR = 50 ns max unless otherwise noted) Parameter Conditions Min Typ Max Units INPUT CHARACTERISTICS Threshold Voltage Positive Transition (VT+) +5 V dcSYS = 4.5 V 2.0 2.7 3.15 V +5 V dcSYS = 5.5 V 3.0 3.2 4.2 V Negative Transition (VT–) +5 V dcSYS = 4.5 V 0.9 1.8 2.2 V +5 V dcSYS = 5.5 V 1.2 2.2 3.0 V Hysteresis Voltage (VH) +5 V dcSYS = 4.5 V 0.4 0.9 1.4 V +5 V dcSYS = 5.5 V 0.5 1.0 1.5 V Input Capacitance (CIN) 5pF Input Bias Current (IIN) Per Input 0.5 µA OUTPUT CHARACTERISTICS Output Voltage 1 High Level (VOH) +5 V dcSYS = 4.5 V, |IO| = 0.02 mA 4.4 V +5 V dcSYS = 4.5 V, |IO| = 4 mA 3.7 V Low Level (VOL) +5 V dcSYS = 4.5 V, |IO| = 0.02 mA 0.1 V +5 V dcSYS = 4.5 V, |IO| = 4 mA 0.4 V Output Three-State Leakage Current ENABLESYS/FLD @ Logic Low/High Level Respectively 0.5 µA DYNAMIC RESPONSE 1 (Refer to Figure 2) Max Logic Signal Frequency (fMIN) 50% Duty Cycle, +5 V dcSYS = 5 V 20 MHz Waveform Edge Symmetry Error (tERROR)tPHL vs. tPLH ±1ns Logic Edge Propagation Delay (tPHL, tPLH)14 25 ns Minimum Pulsewidth (tPWMIN) 25 ns Max Output Update Delay on Fault or After Power-Up Reset Interval ( ≈ 30 µs)2 12 µs ISOLATION BARRIER RATING 3 Operating Isolation Voltage (VCMV) AD261A 375 V rms AD261B 1250 V rms Isolation Rating Test Voltage (VCMV TEST) 4 AD261A 1750 V rms AD261B 3500 V rms Transient Immunity (VTRANSIENT) 10,000 V/ µs Isolation Mode Capacitance (CISO) Total Capacitance, All Lines 9 15 pF Capacitive Leakage Current (ILEAD) 240 V rms @ 60 Hz 2 µA rms POWER SUPPLY Supply Voltage (+5 V dcSYS and +5 V dcFLD) Rated Performance 4.5 5.5 V dc Operating 4.0 5.75 V dc Power Dissipation Capacitance Effective, per Input, Either Side 8 pF Effective per Output, Either Side—No Load 28 pF Quiescent Supply Current Each, +5 V dcSYS & FLD 4mA Supply Current All Lines @ 10 MHz (Sum of +5 V dcSYS & FLD)18 mA TEMPERATURE RANGE Rated Performance (TA) 5 –25 +85 °C Storage (TSTG) –40 +85 °C NOTES 1For best performance, bypass +5 V dc supplies to com., at or near the device (0.01 µF). +5 V dc supplies are also internally bypassed with 0.05 µF. 2As the supply voltage is applied to either side of the AD261, the internal circuitry will go into a power-up reset mode (all lines disabled) for about 30 µs after the point where +5 V dcSYS & FLD passes above 3.3 V. 3“Operating” isolation voltage is derived from the Isolation Test Voltage in accordance with such methods as found in VDE-0883 wherein a device will be “hi-pot” tested at twice the operating voltage, plus one thousand volts. Partial discharge testing, with an acceptance threshold of 80 pC of discharge may be considered the same as a hi-pot test (but nondestructive). 4Partial Discharge at 80 pC THLD. 5Supply Current will increase slightly, but otherwise the unit will function within specification to –40 °C. Specifications are subject to change without notice. |
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