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TC1706 Datasheet(PDF) 1 Page - Transcom, Inc. |
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TC1706 Datasheet(HTML) 1 Page - Transcom, Inc. |
1 / 4 page TC1706 REV5_20070502 TRANSCOM, INC., 90 Dasoong 7 th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 1 / 4 3 W High Linearity and High Efficiency GaAs Power FETs FEATURES ! 3W Typical Power at 6 GHz PHOTO ENLARGEMENT ! Linear Power Gain: G L = 11 dB Typical at 6 GHz ! High Linearity: IP3 = 45 dBm Typical at 6 GHz ! Via Hole Source Ground ! Suitable for High Reliability Application ! Breakdown Voltage: BV DGO ≥ 18 V ! Lg = 0.6 µm*, Wg = 7.5 mm ! High Power Added Efficiency: Nominal PAE of 43 % at 6 GHz ! Tight Vp ranges control ! High RF input power handling capability ! 100 % DC Tested DESCRIPTION The TC1706 is a GaAs Pseudomorphic High Electron Mobility Transistor (PHEMT), which has high linearity and high Power Added Efficiency. The device is processed with a propriety via-hole process, which provides low thermal resistance and low inductance. The long gate length makes the device to have high breakdown voltage. All devices are 100% DC tested to assure consistent quality. Bond pads are gold plated for either thermo-compression or thermo-sonic wire bonding. Backside gold plating is compatible with standard AuSn die-attach. Typical applications include commercial and military high performance power amplifiers. ELECTRICAL SPECIFICATIONS (TA=25 °°°°C) Symbol Conditions MIN TYP MAX UNIT P1dB Output Power at 1dB Gain Compression Point , f = 6 GHz VDS = 8 V, IDS = 750 mA 34.5 35.5 dBm GL Linear Power Gain , f = 6 GHz VDS = 8 V, IDS = 750 mA 10 11 dB IP3 Intercept Point of the 3 rd-order Intermodulation, f = 6 GHz V DS = 8V, IDS = 750mA,**PSCL = 21 dBm 45 dBm PAE Power Added Efficiency at 1dB Compression Power, f = 6 GHz 43 % IDSS Saturated Drain-Source Current at VDS = 2 V, VGS = 0 V 1.8 A gm Transconductance at VDS = 2 V, VGS = 0 V 1275 mS VP Pinch-off Voltage at VDS = 2 V, ID = 15 mA -1.7*** Volts BVDGO Drain-Gate Breakdown Voltage at IDGO = 3.75 mA 18 22 Volts Rth Thermal Resistance 4 °C/W Note: * FET with 0.35 µµµµm gate length is available for high frequency operation. Please contact factory for detail. ** PSCL: Output Power of Single Carrier Level. *** For the tight control of the pinch-off voltage . TC1706’s are divided into 3 groups: (1)TC1706P1519 : Vp = -1.5V to -1.9V (2) TC1706P1620 : Vp = -1.6V to -2.0V (3)TC1706P1721 : Vp = -1.7V to -2.1V In addition, the customers may specify their requirements. |
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