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MMBT2907ADW1T1 Datasheet(PDF) 1 Page - WILLAS ELECTRONIC CORP |
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MMBT2907ADW1T1 Datasheet(HTML) 1 Page - WILLAS ELECTRONIC CORP |
1 / 5 page 1 2 3 4 5 6 SOT-363 Device Shipping ORDERING INFORMATION MMBT2907ADW1T1 Marking 3000 Units/Reel Dual General Purpose Transistor Q1 Q2 (1) (2) (3) (4) (5) (6) Featrues 2F compliance with RoHS requirements. We declare that the material of product MAXIMUM RATINGS Rating Symbol 2907 2907A Unit Collector–Emitter Voltage V CEO –40 –60 Vdc Collector–Base Voltage V CBO –60 Vdc Emitter–Base Voltage V EBO –5.0 Vdc Collector Current — Continuous I C –600 mAdc Value THERMAL CHARACTERISTICS Characteristic Unit Total Device Dissipation FR– 5 Board, (1) PD 225 mW TA = 25°C Derate above 25°C 1.8 mW/°C Thermal Resistance, Junction to Ambient RθJA 556 °C/W Total Device Dissipation PD 300 mW Alumina Substrate, (2) TA = 25°C Derate above 25°C 2.4 mW/°C Thermal Resistance, Junction to Ambient RθJA 417 °C/W Junction and Storage Temperature TJ , Tstg –55 to +150 °C DEVICE MARKING MMBT2907ADW1T1 = 2F Symbol Max ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage(3) V (BR)CEO Vdc (I C = –10 mAdc, I B = 0) MMBT2907 –40 — MMBT2907A –60 — Collector–Emitter Breakdown Voltage(I C = –10 µAdc, I E = 0) V (BR)CBO –60 — Vdc Emitter–Base Breakdown Voltage(I E = –10 µAdc, I C = 0) V (BR)EBO –5.0 — Vdc Collector Cutoff Current( V CB = –30Vdc, I BE(OFF) = –0.5Vdc) I CEX — –50 nAdc Collector Cutoff Current I CBO µAdc ( V CB = –50Vdc, I E = 0) MMBT2907 — –0.020 MMBT2907A — –0.010 ( V CB = –50Vdc, I E = 0, T A =125°C ) MMBT2907 — –20 MMBT2907A — –10 Base Current( V CE = –30Vdc, V EB(off)= –0.5Vdc ) I B — –50 nAdc 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 3. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%. 2012- 0 WILLAS ELECTRONIC CORP. MMBT2907ADW1T1 Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. Low profile surface mounted application in order to optimize board space. Low power loss, high efficiency. High current capability, low forward voltage drop. High surge capability. Guardring for overvoltage protection. Ultra high-speed switching. Silicon epitaxial planar chip, metal silicon junction. Lead-free parts meet environmental standards of MIL-STD-19500 /228 • • • • • • • • Package outline Mechanical data Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H • Terminals :Plated terminals, solderable per MIL-STD-750 , Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram • 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. Dimensions in inches and (millimeters) SOD-123H Pb Free Product 1.0A SURFACE MOUNT SCHOTTKY SOD-123 PACKAGE WILLAS BARRIER RECTIFIERS -20V- 200V FM120-M THRU FM1200-M MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% WILLAS ELECTRONIC CORP. 201 2-06 RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Marking Code 12 13 14 15 16 18 10 115 120 Maximum Recurrent Peak Reverse Voltage VRRM Maximum RMS Voltage VRMS Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 14 21 28 35 42 56 70 105 140 20 30 40 50 60 80 100 150 200 Volts Volts Volts Maximum Average Forward Rectified Current Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) IO IFSM 1.0 30 Amps Amps Typical Thermal Resistance (Note 2) RΘJA Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range TSTG -55 to +125 40 120 - 65 to +175 -55 to +150 ℃/W PF ℃ ℃ CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Maximum Forward Voltage at 1.0A DC VF 0.50 0.70 0.85 0.9 0.92 Volts @TA=25℃ 0.5 Maximum Average Reverse Current at Rated DC Blocking Voltage @TA=125℃ IR 10 mAmps NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" • • Pb-Free package is available RoHS product for packing code suffix ”G” Halogen free product for packing code suffix “H” |
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