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MMBT2369(A)LT1 Datasheet(PDF) 2 Page - WILLAS ELECTRONIC CORP

Part # MMBT2369(A)LT1
Description  Switching Transistors
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Manufacturer  WILLAS [WILLAS ELECTRONIC CORP]
Direct Link  http://www.willas.com.tw
Logo WILLAS - WILLAS ELECTRONIC CORP

MMBT2369(A)LT1 Datasheet(HTML) 2 Page - WILLAS ELECTRONIC CORP

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ELECTRICAL CHARACTERISTICS (T A= 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
DC Current Gain(3)
hFE
––
(I C = 10 mAdc, V CE = 1.0 Vdc)
M
MBT2369
40
––
120
(I C = 10 mAdc, V CE = 1.0 Vdc)
M
MBT2369A
––
––
120
(I C = 10 mAdc, V CE = 0.35 Vdc)
M
MBT2369A
40
––
––
(I C= 10 mAdc, V CE= 0.35 Vdc,T A= –55°C )
M
MBT2369A
20
––
––
(I C = 30 mAdc, V CE = 0.4Vdc)
M
MBT2369A
30
––
––
(I C = 100mAdc, V CE = 2.0 Vdc)
M
MBT2369
20
––
––
(I C = 100mAdc, V CE = 1.0 Vdc)
M
MBT2369A
20
––
––
Collector–Emitter Saturation Voltage(3)
VCE(sat)
Vdc
(I C = 10 mAdc, I B = 1.0 mAdc)
M
MBT2369
––
––
0.25
(I C = 10 mAdc, I B = 1.0 mAdc)
M
MBT2369A
––
––
0.20
(I C = 10 mAdc, I B = 1.0 mAdc, T A= + 125°C )
M
MBT2369A
––
––
0.30
(I C = 30mAdc, I B = 3.0 mAdc)
M
MBT2369A
––
––
0.25
(I C = 100mAdc, I B = 10 mAdc)
M
MBT2369A
––
––
0.50
Base–Emitter Saturation Voltage
V BE(sat)
Vdc
(I C = 10 mAdc, I B = 1.0 mAdc)
M
MBT2369A
0.7
––
0.85
(I C = 10 mAdc, I B = 1.0 mAdc, T A= – 55°C)
M
MBT2369A
––
––
1.02
(I C = 30 mAdc, I B = 3.0 mAdc)
M
MBT2369A
––
––
1.15
(I C = 100 mAdc, I B = 10 mAdc)
M
MBT2369A
––
––
1.60
SMALL–SIGNAL CHARACTERISTICS
Output Capacitance
(V CB = 5.0 Vdc, I E = 0, f = 1.0 MHz)
C obo
––
––
4.0
pF
Small–Signal Current Gain
h fe
5.0
(V CE=10 Vdc, I C = 10 mAdc, f = 100 MHz)
SWITCHING CHARACTERISTICS
Storage Time
t s
5.0
13
ns
(I B1 = I B2 = I C = 10 mAdc)
Turn–On Time
t on
8.0
12
ns
(V CC = 3.0 Vdc, I C = 10 mAdc, I B1 = 3.0 mAdc)
Turn–Off Time
t off
—10
18
ns
(V CC = 3.0 Vdc, I C = 10 mAdc, I B1 = 3.0 mAdc, I B2 = 1.5 mAdc)
3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%.
2012-11
WILLAS ELECTRONIC CORP.
Switching Transistors
MMBT2369(A)LT1
Features
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
Low profile surface mounted application in order to
optimize board space.
Low power loss, high efficiency.
High current capability, low forward voltage drop.
High surge capability.
Guardring for overvoltage protection.
Ultra high-speed switching.
Silicon epitaxial planar chip, metal silicon junction.
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
Package outline
Mechanical data
Epoxy : UL94-V0 rated flame retardant
Case : Molded plastic, SOD-123H
Terminals :Plated terminals, solderable per MIL-STD-750
,
Method 2026
Polarity : Indicated by cathode band
Mounting Position : Any
Weight : Approximated 0.011 gram
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
SOD-123H
Pb Free Product
1.0A SURFACE MOUNT SCHOTTKY
SOD-123
PACKAGE
WILLAS
BARRIER RECTIFIERS -20V- 200V
FM120-M
THRU
FM1200-M
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
WILLAS ELECTRONIC CORP.
201
2-06
 
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Marking Code
12
13
14
15
16
18
10
115
120
Maximum Recurrent Peak Reverse Voltage
VRRM
Maximum RMS Voltage
VRMS
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
100
150
200
14
21
28
35
42
56
70
105
140
20
30
40
50
60
80
100
150
200
Volts
Volts
Volts
Maximum Average Forward Rectified Current
 
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
IO
 
IFSM
1.0
 
30
Amps
 
Amps
Typical Thermal Resistance (Note 2)
RΘJA
Typical Junction Capacitance (Note 1)
CJ
Operating Temperature Range
TJ
Storage Temperature Range
TSTG
 
 
-55 to +125
40
120
 
- 65 to +175
 
 
-55 to +150
℃/W
PF
 
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Maximum Forward Voltage at 1.0A DC
VF
0.50
0.70
0.85
0.9
0.92
Volts
@TA=25℃
0.5
Maximum Average Reverse Current at
Rated DC Blocking Voltage
@TA=125℃
IR
10
 
mAmps
 
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
 
 
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"


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