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MMBT2222ADW1T1 Datasheet(PDF) 3 Page - WILLAS ELECTRONIC CORP |
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MMBT2222ADW1T1 Datasheet(HTML) 3 Page - WILLAS ELECTRONIC CORP |
3 / 6 page SMALL–SIGNAL CHARACTERISTICS Current–Gain – Bandwidth Product (Note 3) (IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz) fT 300 – MHz Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Cobo – 8.0 pF Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo – 25 pF Input Impedance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hie 2.0 0.25 8.0 1.25 kΩ Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hre – – 8.0 4.0 X 10–4 Small–Signal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hfe 50 75 300 375 – Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hoe 5.0 25 35 200 mmhos Collector Base Time Constant (IE = 20 mAdc, VCB = 20 Vdc, f = 31.8 MHz) rb, Cc – 150 ps Noise Figure (IC = 100 mAdc, VCE = 10 Vdc, RS = 1.0 kΩ, f = 1.0 kHz) NF – 4.0 dB SWITCHING CHARACTERISTICS Delay Time (VCC = 30 Vdc, VBE(off) = –0.5 Vdc, td – 10 ns Rise Time (VCC 30 Vdc, VBE(off) 0.5 Vdc, IC = 150 mAdc, IB1 = 15 mAdc) tr – 25 ns Storage Time (VCC = 30 Vdc, IC = 150 mAdc, ts – 225 ns Fall Time (VCC 30 Vdc, IC 150 mAdc, IB1 = IB2 = 15 mAdc) tf – 60 ns 3. fT is defined as the frequency at which |hfe| extrapolates to unity. 2012- 0 WILLAS ELECTRONIC CORP. Dual General Purpose Transistors MMBT2222ADW1T1 Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. Low profile surface mounted application in order to optimize board space. Low power loss, high efficiency. High current capability, low forward voltage drop. High surge capability. Guardring for overvoltage protection. Ultra high-speed switching. Silicon epitaxial planar chip, metal silicon junction. Lead-free parts meet environmental standards of MIL-STD-19500 /228 • • • • • • • • Package outline Mechanical data Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H • Terminals :Plated terminals, solderable per MIL-STD-750 , Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram • 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. Dimensions in inches and (millimeters) SOD-123H Pb Free Product 1.0A SURFACE MOUNT SCHOTTKY SOD-123 PACKAGE WILLAS BARRIER RECTIFIERS -20V- 200V FM120-M THRU FM1200-M MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% WILLAS ELECTRONIC CORP. 201 2-06 RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Marking Code 12 13 14 15 16 18 10 115 120 Maximum Recurrent Peak Reverse Voltage VRRM Maximum RMS Voltage VRMS Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 14 21 28 35 42 56 70 105 140 20 30 40 50 60 80 100 150 200 Volts Volts Volts Maximum Average Forward Rectified Current Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) IO IFSM 1.0 30 Amps Amps Typical Thermal Resistance (Note 2) RΘJA Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range TSTG -55 to +125 40 120 - 65 to +175 -55 to +150 ℃/W PF ℃ ℃ CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Maximum Forward Voltage at 1.0A DC VF 0.50 0.70 0.85 0.9 0.92 Volts @TA=25℃ 0.5 Maximum Average Reverse Current at Rated DC Blocking Voltage @TA=125℃ IR 10 mAmps NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" • • |
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