Electronic Components Datasheet Search
  English  ▼
ALLDATASHEET.COM

X  

MMBT3906TT1 Datasheet(PDF) 1 Page - WILLAS ELECTRONIC CORP

Part # MMBT3906TT1
Description  General Purpose Transistors
Download  6 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  WILLAS [WILLAS ELECTRONIC CORP]
Direct Link  http://www.willas.com.tw
Logo WILLAS - WILLAS ELECTRONIC CORP

MMBT3906TT1 Datasheet(HTML) 1 Page - WILLAS ELECTRONIC CORP

  MMBT3906TT1 Datasheet HTML 1Page - WILLAS ELECTRONIC CORP MMBT3906TT1 Datasheet HTML 2Page - WILLAS ELECTRONIC CORP MMBT3906TT1 Datasheet HTML 3Page - WILLAS ELECTRONIC CORP MMBT3906TT1 Datasheet HTML 4Page - WILLAS ELECTRONIC CORP MMBT3906TT1 Datasheet HTML 5Page - WILLAS ELECTRONIC CORP MMBT3906TT1 Datasheet HTML 6Page - WILLAS ELECTRONIC CORP  
Zoom Inzoom in Zoom Outzoom out
 1 / 6 page
background image
SOT-523
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
V CEO
– 40
Vdc
Collector–Base Voltage
V CBO
– 40
Vdc
Emitter–Base Voltage
V EBO
– 5.0
Vdc
Collector Current — Continuous
I C
– 200
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR– 4 Board(1)
P D
200
mW
T A =25 °C
Derate above 25°C
1.6
mW/°C
Thermal Resistance Junction to Ambient
R θJA
600
°C/W
Total Device Dissipation
P D
300
mW
FR-4 Board (2), T A = 25°C
Derate above 25°C
2.4
mW/°C
Thermal Resistance Junction to Ambient
R θJA
400
°C/W
Junction and Storage Temperature
T J , T stg
–55 to +150
°C
DEVICE MARKING
M
MBT3906TT1 = 2A
ELECTRICAL CHARACTERISTICS (T A =25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (3)
V (BR)CEO
Vdc
(I C = –1.0 mAdc, I B = 0)
– 40
Collector–Base Breakdown Voltage
V (BR)CBO
Vdc
(I C = –10 µAdc, I E = 0)
– 40
Emitter–Base Breakdown Voltage
V (BR)EBO
Vdc
(I E = –10 µAdc, I C = 0)
– 5.0
Base Cutoff Current
I BL
nAdc
(V CE = –30 Vdc, V EB = –3.0 Vdc)
– 50
Collector Cutoff Current
I CEX
nAdc
(V CE = –30 Vdc, V EB = –3.0 Vdc)
– 50
1. FR-4 Minimum Pad.
2. FR-4 1.0 x 1.0 Inch Pad.
General Purpose Transistors
PNP Silicon
2
EMITTER
3
COLLECTOR
1
BASE
3. Pulse Width <300 µs; Duty Cycle <2.0%.
FEATURE
Simplifies Circuit Design.
Device
Marking
Shipping
M
MBT3906TT1
2A
3000/Tape & Reel
ORDERING INFORMATION
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
MMBT3906TT1
2012-11
WILLAS ELECTRONIC CORP.
Features
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
Low profile surface mounted application in order to
optimize board space.
Low power loss, high efficiency.
High current capability, low forward voltage drop.
High surge capability.
Guardring for overvoltage protection.
Ultra high-speed switching.
Silicon epitaxial planar chip, metal silicon junction.
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
Package outline
Mechanical data
Epoxy : UL94-V0 rated flame retardant
Case : Molded plastic, SOD-123H
Terminals :Plated terminals, solderable per MIL-STD-750
,
Method 2026
Polarity : Indicated by cathode band
Mounting Position : Any
Weight : Approximated 0.011 gram
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
SOD-123H
Pb Free Product
1.0A SURFACE MOUNT SCHOTTKY
SOD-123
PACKAGE
WILLAS
BARRIER RECTIFIERS -20V- 200V
FM120-M
THRU
FM1200-M
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
WILLAS ELECTRONIC CORP.
201
2-06
 
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Marking Code
12
13
14
15
16
18
10
115
120
Maximum Recurrent Peak Reverse Voltage
VRRM
Maximum RMS Voltage
VRMS
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
100
150
200
14
21
28
35
42
56
70
105
140
20
30
40
50
60
80
100
150
200
Volts
Volts
Volts
Maximum Average Forward Rectified Current
 
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
IO
 
IFSM
1.0
 
30
Amps
 
Amps
Typical Thermal Resistance (Note 2)
RΘJA
Typical Junction Capacitance (Note 1)
CJ
Operating Temperature Range
TJ
Storage Temperature Range
TSTG
 
 
-55 to +125
40
120
 
- 65 to +175
 
 
-55 to +150
℃/W
PF
 
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Maximum Forward Voltage at 1.0A DC
VF
0.50
0.70
0.85
0.9
0.92
Volts
@TA=25℃
0.5
Maximum Average Reverse Current at
Rated DC Blocking Voltage
@TA=125℃
IR
10
 
mAmps
 
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
 
 
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"


Similar Part No. - MMBT3906TT1

ManufacturerPart #DatasheetDescription
logo
ON Semiconductor
MMBT3906TT1 ONSEMI-MMBT3906TT1 Datasheet
87Kb / 7P
   General Purpose Transistors PNP Silicon
January, 2006 ??Rev. 1
MMBT3906TT1G ONSEMI-MMBT3906TT1G Datasheet
87Kb / 7P
   General Purpose Transistors PNP Silicon
January, 2006 ??Rev. 1
More results

Similar Description - MMBT3906TT1

ManufacturerPart #DatasheetDescription
logo
ON Semiconductor
2N4403 ONSEMI-2N4403 Datasheet
106Kb / 7P
   General Purpose Transistors
March, 2007 ??Rev. 3
logo
E-Tech Electronics LTD
BC846ALT1 ETL-BC846ALT1 Datasheet
194Kb / 4P
   General Purpose Transistors
logo
List of Unclassifed Man...
SC2412KLT1 ETC1-SC2412KLT1 Datasheet
151Kb / 3P
   General Purpose Transistors
logo
Motorola, Inc
BCW61BLT1 MOTOROLA-BCW61BLT1 Datasheet
394Kb / 8P
   General Purpose Transistors
logo
ON Semiconductor
MMBT2131T1 ONSEMI-MMBT2131T1_06 Datasheet
66Kb / 4P
   General Purpose Transistors
January, 2006 ??Rev. 4
MMBT2222LT1G ONSEMI-MMBT2222LT1G_09 Datasheet
132Kb / 7P
   General Purpose Transistors
October, 2009 ??Rev. 9
SBC847CWT1G ONSEMI-SBC847CWT1G Datasheet
107Kb / 13P
   General Purpose Transistors
August, 2014 ??Rev. 10
logo
WILLAS ELECTRONIC CORP
2SA812XLT1 WILLAS-2SA812XLT1 Datasheet
351Kb / 5P
   General Purpose Transistors
BC817-XXLT1 WILLAS-BC817-XXLT1 Datasheet
164Kb / 3P
   General Purpose Transistors
logo
ON Semiconductor
BC846ALT1G ONSEMI-BC846ALT1G_15 Datasheet
116Kb / 13P
   General Purpose Transistors
March, 2015 ??Rev. 14
More results


Html Pages

1 2 3 4 5 6


Datasheet Download

Go To PDF Page


Link URL




Privacy Policy
ALLDATASHEET.COM
Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Datasheet Upload   |   Contact us   |   Privacy Policy   |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com