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EN6458C Datasheet(PDF) 2 Page - Sanyo Semicon Device

Part # EN6458C
Description  General-Purpose Switching Device Applications
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Manufacturer  SANYO [Sanyo Semicon Device]
Direct Link  https://www.sanyo-av.com/us/
Logo SANYO - Sanyo Semicon Device

EN6458C Datasheet(HTML) 2 Page - Sanyo Semicon Device

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MCH6601
No.6458-2/7
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=--1mA, VGS=0V
--30
V
Zero-Gate Voltage Drain Current
IDSS
VDS=--30V, VGS=0V
--1
μA
Gate-to-Source Leakage Current
IGSS
VGS=±8V, VDS=0V
±10
μA
Cutoff Voltage
VGS(off)
VDS=--10V, ID=--100μA
--0.4
--1.4
V
Forward Transfer Admittance
| yfs |
VDS=--10V, ID=--50mA
80
110
mS
Static Drain-to-Source On-State Resistance
RDS(on)1
ID=--50mA, VGS=--4V
8
10.4
Ω
RDS(on)2
ID=--30mA, VGS=--2.5V
11
15.4
Ω
RDS(on)3
ID=--1mA, VGS=--1.5V
27
54
Ω
Input Capacitance
Ciss
VDS=--10V, f=1MHz
7.5
pF
Output Capacitance
Coss
5.7
pF
Reverse Transfer Capacitance
Crss
1.8
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit.
24
ns
Rise Time
tr
55
ns
Turn-OFF Delay Time
td(off)
120
ns
Fall Time
tf
130
ns
Total Gate Charge
Qg
VDS=--10V, VGS=--10V, ID=--100mA
1.43
nC
Gate-to-Source Charge
Qgs
0.18
nC
Gate-to-Drain “Miller” Charge
Qgd
0.25
nC
Diode Forward Voltage
VSD
IS=--100mA, VGS=0V
--0.83
--1.2
V
Switching Time Test Circuit
Ordering Information
Device
Package
Shipping
memo
MCH6601-TL-E
MCPH6
3,000pcs./reel
Pb Free
PW=10μs
D.C.≤1%
0V
--4V
VIN
VIN
P.G
50Ω
G
S
ID= --50mA
RL=300Ω
VDD= --15V
VOUT
D
MCH6601


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