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EFC4615R Datasheet(PDF) 2 Page - Sanyo Semicon Device

Part # EFC4615R
Description  General-Purpose Switching Device Applications
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Manufacturer  SANYO [Sanyo Semicon Device]
Direct Link  https://www.sanyo-av.com/us/
Logo SANYO - Sanyo Semicon Device

EFC4615R Datasheet(HTML) 2 Page - Sanyo Semicon Device

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EFC4615R
No. A1629-2/7
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
Source-to-Source Breakdown Voltage
V(BR)SSS
IS=1mA, VGS=0V
Test Circuit 1
24
V
Zero-Gate Voltage Source Current
ISSS
VSS=20V, VGS=0V
Test Circuit 1
1
μA
Gate-to-Source Leakage Current
IGSS
VGS=±8V, VSS=0V
Test Circuit 2
±10
μA
Cutoff Voltage
VGS(off)
VSS=10V, IS=1mA
Test Circuit 3
0.5
1.3
V
Forward Transfer Admittance
| yfs |
VSS=10V, IS=3A
Test Circuit 4
5.4
S
Static Source-to-Source On-State Resistance
RSS(on)1
IS=3A, VGS=4.5V
Test Circuit 5
19
27
31
RSS(on)2
IS=3A, VGS=4.0V
Test Circuit 5
21
28
33
RSS(on)3
IS=3A, VGS=3.1V
Test Circuit 5
24
33
44
RSS(on)4
IS=3A, VGS=2.5V
Test Circuit 5
28
39
52
Turn-ON Delay Time
td(on)
See specified Test Circuit.
Test Circuit 7
13
ns
Rise Time
tr
235
ns
Turn-OFF Delay Time
td(off)
335
ns
Fall Time
tf
360
ns
Total Gate Charge
Qg
VSS=10V, VGS=4.5V, IS=6A
8.8
nC
Forward Source-to-Source Voltage
VF(S-S)
IS=6A, VGS=0V
Test Circuit 6
1
1.2
V
Ordering Information
Device
Package
Shipping
memo
EFC4615R-TR
EFCP
5,000pcs./reel
Pb Free and Halogen Free
Test circuits are example of measuring FET1 side
VSSS / ISSS
IGSS(+) / (--)
VGS(off)
10V 1mA
| yfs |
IT11565
IT11566
IT11567
IT11568
S2
S1
G2
G1
S2
S1
G2
G1
S2
S1
G2
G1
S2
S1
G2
G1
* Note: Connect the mesurement terminal reversely
if you want to measure the FET2 side.
Test Circuit 1
Test Circuit 2
Test Circuit 3
Test Circuit 4


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