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ATP613 Datasheet(PDF) 1 Page - Sanyo Semicon Device

Part # ATP613
Description  General-Purpose Switching Device Applications
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Manufacturer  SANYO [Sanyo Semicon Device]
Direct Link  https://www.sanyo-av.com/us/
Logo SANYO - Sanyo Semicon Device

ATP613 Datasheet(HTML) 1 Page - Sanyo Semicon Device

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ATP613
No. A1903-1/7
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : ATPAK
0.4
0.55
13
2
6.5
0.6
4
0.8
1.5
0.4
2.6
4.6
0.4
2.3
2.3
ATP613-TL-H
Features
Reverse recovery time trr=60ns(typ.)
ON-resistance RDS(on)=1.55Ω(typ.)
Input Capacitance Ciss=350pF(typ.)
10V drive
Halogen free compliance
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
500
V
Gate-to-Source Voltage
VGSS
±30
V
Drain Current (DC)
ID
5.5
A
Drain Current (Pulse)
IDP
PW≤10μs, duty cycle≤1%
19
A
Source-to-Drain Diode Forward Current (DC)
IS
5.5
A
Source-to-Drain Diode Forward Current (Pulse)
ISP
PW≤10μs, duty cycle≤1%
19
A
Allowable Power Dissipation
PD
Tc=25°C70
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Avalanche Energy (Single Pulse) *1
EAS
93
mJ
Avalanche Current *2
IAV
5.5
A
Note :
*1 VDD=99V, L=5mH, IAV=5.5A (Fig.1)
*2 L≤5mH, Single pulse
Package Dimensions
unit : mm (typ)
7057-001
Ordering number : ENA1903A
D2612 TKIM TC-00002855/D1510QB TKIM TC-00002545
ATP613
http://www.sanyosemi.com/en/network/
Product & Package Information
• Package
: ATPAK
• JEITA, JEDEC
: -
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type: TL
Marking
Electrical Connection
TL
SANYO Semiconductors
DATA SHEET
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
ATP613
LOT No.
1
3
2,4


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