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FM28V100-TG Datasheet(PDF) 1 Page - Cypress Semiconductor |
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FM28V100-TG Datasheet(HTML) 1 Page - Cypress Semiconductor |
1 / 13 page This product conforms to specifications per the terms of the Ramtron Ramtron International Corporation standard warranty. The product has completed Ramtron’s internal 1850 Ramtron Drive, Colorado Springs, CO 80921 qualification testing and has reached production status. (800) 545-FRAM, (719) 481-7000 Rev. 3.0 http://www.ramtron.com Apr. 2012 Page 1 of 13 FM28V100 1Mbit Bytewide F-RAM Memory Features 1Mbit Ferroelectric Nonvolatile RAM Organized as 128Kx8 High Endurance 100 Trillion (10 14) Read/Writes NoDelay™ Writes Page Mode Operation to 33MHz Advanced High-Reliability Ferroelectric Process Superior to Battery-backed SRAM Modules No battery concerns Monolithic reliability True surface mount solution, no rework steps Superior for moisture, shock, and vibration SRAM Replacement JEDEC 128Kx8 SRAM pinout 60 ns Access Time, 90 ns Cycle Time Low Power Operation 2.0V – 3.6V Power Supply Standby Current 90 A (typ) Active Current 7 mA (typ) Industry Standard Configurations Industrial Temperature -40 C to +85 C 32-pin “Green”/RoHS Package General Description The FM28V100 is a 128K x 8 nonvolatile memory that reads and writes like a standard SRAM. A ferroelectric random access memory or F-RAM is nonvolatile, which means that data is retained after power is removed. It provides data retention for over 10 years while eliminating the reliability concerns, functional disadvantages, and system design complexities of battery-backed SRAM (BBSRAM). Fast write timing and very high write endurance make F-RAM superior to other types of memory. In-system operation of the FM28V100 is very similar to other RAM devices and can be used as a drop-in replacement for standard SRAM. Read and write cycles may be triggered by toggling a chip enable pin or simply by changing the address. The F-RAM memory is nonvolatile due to its unique ferroelectric memory process. These features make the FM28V100 ideal for nonvolatile memory applications requiring frequent or rapid writes in the form of an SRAM. Device specifications are guaranteed over the industrial temperature range -40°C to +85°C. Pin Configuration * Reserved for A17 on 2Mb Ordering Information FM28V100-TG 32-pin “Green”/RoHS TSOP FM28V100-TGTR 32-pin “Green”/RoHS TSOP, Tape & Reel TSOP-I 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 A11 A9 A8 A13 WE CE2 A15 VDD NC* A16 A14 A12 A7 A6 A5 A4 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 OE A10 CE1 DQ7 DQ6 DQ5 DQ4 DQ3 VSS DQ2 DQ1 DQ0 A0 A1 A2 A3 |
Similar Part No. - FM28V100-TG |
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Similar Description - FM28V100-TG |
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