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UM3202 Datasheet(PDF) 2 Page - Unitpower Technology Limited |
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UM3202 Datasheet(HTML) 2 Page - Unitpower Technology Limited |
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2 / 4 page  2 Dual N-Ch 30V Fast Switching MOSFETs Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 30 --- --- V △ BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=1mA --- 0.034 --- V/℃ RDS(ON) Static Drain-Source On-Resistance 2 VGS=10V , ID=7A --- 13 18 m Ω VGS=4.5V , ID=4A --- 20 28 VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 1.2 1.5 2.5 V △ VGS(th) VGS(th) Temperature Coefficient --- -5.8 --- mV/℃ IDSS Drain-Source Leakage Current VDS=24V , VGS=0V , TJ=25℃ --- --- 1 uA VDS=24V , VGS=0V , TJ=55℃ --- --- 5 IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ± 100 nA gfs Forward Transconductance VDS=5V , ID=7A --- 6 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 2.5 5 Ω Qg Total Gate Charge (4.5V) VDS=15V , VGS=4.5V , ID=7A --- 6 8.4 nC Qgs Gate-Source Charge --- 2.5 3.5 Qgd Gate-Drain Charge --- 2.1 2.9 Td(on) Turn-On Delay Time VDD=15V , VGS=10V , RG=3.3Ω ID=7A --- 2.4 4.8 ns Tr Rise Time --- 7.8 14 Td(off) Turn-Off Delay Time --- 22 44 Tf Fall Time --- 4 8 Ciss Input Capacitance VDS=15V , VGS=0V , f=1MHz --- 572 801 pF Coss Output Capacitance --- 80 112 Crss Reverse Transfer Capacitance --- 65 91 Symbol Parameter Conditions Min. Typ. Max. Unit EAS Single Pulse Avalanche Energy 5 VDD=25V , L=0.1mH , IAS=10A 16 --- --- mJ Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current 1,6 VG=VD=0V , Force Current --- --- 7.3 A ISM Pulsed Source Current 2,6 --- --- 37 A VSD Diode Forward Voltage 2 VGS=0V , IS=1A , TJ=25℃ --- --- 1.2 V trr Reverse Recovery Time IF=7A , dI/dt=100A/µs , TJ=25℃ --- 20 --- nS Qrr Reverse Recovery Charge --- 1.1 --- nC Note : 1.The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=21A 4.The power dissipation is limited by 150℃ junction temperature 5.The Min. value is 100% EAS tested guarantee. 6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Diode Characteristics Guaranteed Avalanche Characteristics UM3202 |
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