UD6004 datasheet(2/4 Pages) UNITPOWER

Part #	UD6004

Description	N-Ch 60V Fast Switching MOSFETs

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Manufacturer	UNITPOWER [Unitpower Technology Limited]

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N-Ch 60V Fast Switching MOSFETs

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

BVDSS

Drain-Source Breakdown Voltage

VGS=0V , ID=250uA

60

---

V

△

BVDSS/△TJ BVDSS Temperature Coefficient

Reference to 25℃ , ID=1mA

---

0.063

---

V/℃

VGS=10V , ID=15A

---

25

30

RDS(ON)

Static Drain-Source On-Resistance

2

VGS=4.5V , ID=10A

---

30

38

m

Ω

VGS(th)

Gate Threshold Voltage

1.2

2.5

V

△

VGS(th)

VGS(th) Temperature Coefficient

VGS=VDS , ID =250uA

---

-5.24

---

mV/℃

VDS=48V , VGS=0V , TJ=25℃

---

1

IDSS

Drain-Source Leakage Current

VDS=48V , VGS=0V , TJ=55℃

---

5

uA

IGSS

Gate-Source Leakage Current

VGS=±20V , VDS=0V

---

±

100

nA

gfs

Forward Transconductance

VDS=5V , ID=15A

---

17

---

S

Rg

Gate Resistance

VDS=0V , VGS=0V , f=1MHz

---

3.2

Ω

Qg

Total Gate Charge (4.5V)

---

12.56

---

Qgs

Gate-Source Charge

---

3.24

---

Qgd

Gate-Drain Charge

VDS=48V , VGS=4.5V , ID=10A

---

6.31

---

nC

Td(on)

Turn-On Delay Time

---

8

---

Tr

Rise Time

---

14.2

---

Td(off)

Turn-Off Delay Time

---

24.4

---

Tf

Fall Time

VDD=30V , VGS=10V , RG=3.3Ω,

ID=10A

---

4.6

---

ns

Ciss

Input Capacitance

---

1345

---

Coss

Output Capacitance

---

72.5

---

Crss

Reverse Transfer Capacitance

VDS=25V , VGS=0V , f=1MHz

---

54.4

---

pF

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

EAS

Single Pulse Avalanche Energy

5

VDD=25V , L=0.1mH , IAS=15A

15.2

---

mJ

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

IS

Continuous Source Current

1,6

---

25

A

ISM

Pulsed Source Current

2,6

VG=VD=0V , Force Current

---

50

A

VSD

Diode Forward Voltage

2

VGS=0V , IS=1A , TJ=25℃

---

1.2

V

Note :

1.The data tested by surface mounted on a 1 inch

2 FR-4 board with 2OZ copper.

2.The data tested by pulsed , pulse width

≦ 300us , duty cycle ≦ 2%

3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=15A

4.The power dissipation is limited by 150℃ junction temperature

5.The Min. value is 100% EAS tested guarantee.

6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.

Electrical Characteristics (TJ=25 ℃, unless otherwise noted)

Guaranteed Avalanche Characteristics

Diode Characteristics

UD6004

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