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IRF830 Datasheet(PDF) 1 Page - Comset Semiconductor |
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IRF830 Datasheet(HTML) 1 Page - Comset Semiconductor |
1 / 3 page IRF830 1/3 09/11/2012 COMSET SEMICONDUCTORS SEMICONDUCTORS N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS FEATURE ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit VDS Drain-Source Voltage 500 V IDS Continuous Drain Current TC= 37°C 4.5 A IDM Pulsed Drain Current TC= 25°C 18 IAR Avalanche Current, Limited by Tjmax 4.5 EAS Avalanche Energy, Single pulse 280 mJ EAR Avalanche Energy, Periodic Limited by Tjmax 7.4 VGS Gate-Source Voltage 20 V RDS(on) Drain-Source on Resistance 1.5 Ω PT Power Dissipation at Case Temperature TC= 25°C 74 W tJ Operating Temperature 150 °C tstg Storage Temperature range -55 to +150 THERMAL CHARACTERISTICS Symbol Ratings Value Unit RthJC Thermal Resistance, junction-case 1.7 °C/W RthJA Thermal Resistance, junction-ambient 62 N channel in a plastic TO220 package. They are intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies. DC-DC converters, motor control circuits and general purpose switching applications Compliance to RoHS. |
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