IRF830

1/3

09/11/2012

COMSET SEMICONDUCTORS

SEMICONDUCTORS

N CHANNEL ENHANCEMENT MODE

POWER MOS TRANSISTORS

FEATURE

ABSOLUTE MAXIMUM RATINGS

Symbol

Ratings

Value

Unit

Drain-Source Voltage

500

V

4.5

A

18

4.5

Avalanche Energy, Single pulse

280

mJ

7.4

Gate-Source Voltage

20

V

Drain-Source on Resistance

1.5

Ω

74

W

Operating Temperature

150

°C

Storage Temperature range

-55 to +150

THERMAL CHARACTERISTICS

Symbol

Ratings

Value

Unit

Thermal Resistance, junction-case

1.7

°C/W

Thermal Resistance, junction-ambient

62

N channel in a plastic TO220 package.

They are intended for use in off-line switched mode power

supplies, T.V. and computer monitor power supplies.

DC-DC converters, motor control circuits and general purpose

switching applications

Compliance to RoHS.