W24L257A-20 datasheet(2/9 Pages) WINBOND

Part #	W24L257A-20

Description	32K X 8 High Speed CMOS Static RAM

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Manufacturer	WINBOND [Winbond]

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W24L257A

- 2 -

TRUTH TABLE

CS

OE

WE

MODE

I/O1

−I/O8

VDD CURRENT

H

X

Not Selected

High Z

ISB, ISB1

L

H

Output Disable

High Z

IDD

L

H

Read

Data Out

IDD

L

X

L

Write

Data In

IDD

DC CHARACTERISTICS

Absolute Maximum Ratings

PARAMETER

RATING

UNIT

Supply Voltage to VSS Potential

-0.5 to +4.6

V

Input/Output to VSS Potential

-0.5 to VDD +0.5

V

Allowable Power Dissipation

1.0

W

Storage Temperature

-65 to +150

°C

Operating Temperature

0 to +70

°C

Note: Exposure to conditions beyond those listed under Absolute Maximum Ratings may adversely affect the life and reliability of the

device.

Operating Characteristics

(VDD = 3.3V

± 5%, VSS = 0V, Ta = 0 to 70° C)

PARAMETER

SYM

.

TEST CONDITIONS

MIN

.

TYP

.

MAX.

UNIT

Input Low Voltage

VIL

-

-0.5

-

+0.8

V

Input High Voltage

VIH

-

+2.0

-

VDD +0.3

V

Input Leakage Current

ILI

VIN = VSS to VDD

-10

-

+10

µA

Output Leakage

Current

ILO

VI/O = VSS to VDD, CS = VIH (min.)

or OE = VIH (min.) or WE = VIL (max.)

-10

-

+ 10

µA

Output Low Voltage

VOL

IOL = +8.0 mA

-

0.4

V

Output High Voltage

VOH

IOH = -4.0 mA

2.4

-

V

Operating Power

IDD

CS = VIL (max.), I/O = 0 mA

12

-

150

mA

Supply Current

Cycle = min.

15

-

120

mA

Duty = 100%

20

-

100

mA

Standby Power

Supply Current

ISB

CS = VIH (min.), Cycle = min.

Duty = 100%

-

20

mA

ISB1

CS

≥ VDD -0.2V

-

200

µA

Note: Typical characteristics are at VDD = 3.3V, Ta = 25

° C.

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