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BDT63A Datasheet(PDF) 3 Page - Comset Semiconductor |
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BDT63A Datasheet(HTML) 3 Page - Comset Semiconductor |
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3 / 5 page  BDT63-A-B-C 26/09/2012 COMSET SEMICONDUCTORS 3 | 5 SEMICONDUCTORS ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) Min Typ Max Unit ICBO Collector Cutoff Current IE= 0, VCB = VCBOmax BDT63 - - 0.2 mA BDT63A BDT63B BDT63C IE= 0, VCB =1/2 VCBOmax TJ= 150 °C BDT63 - - 2 mA BDT63A BDT63B BDT63C ICEO Collector Cutoff Current IE= 0, VCE = 1/2 VCEOmax BDT63 - - 0.5 mA BDT63A BDT63B BDT63C IEBO Emitter Cutoff Current VEB= 5 V, IC= 0 BDT63 - - 5.0 mA BDT63A BDT63B BDT63C VCEO Collector-Emitter Breakdown Voltage IC= 30 mA, IB= 0 BDT63 60 - - V BDT63A 80 - - BDT63B 100 - - BDT63C 120 - - VCE(SAT) Collector-Emitter saturation Voltage (*) IC= 3 A, IB= 12 mA BDT63 - - 2 V BDT63A BDT63B BDT63C IC= 8 A, IB=80 mA BDT63 - - 2.5 BDT63A BDT63B BDT63C |
Similar Part No. - BDT63A |
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Similar Description - BDT63A |
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