BD439 datasheet(2/3 Pages) COMSET

Part #	BD439

Description	SILICON NPN POWER TRANSISTORS

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Manufacturer	COMSET [Comset Semiconductor]

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BD439 – BD441

25/09/2012

COMSET SEMICONDUCTORS

2 | 2

27/08/2012

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min

Typ

Max

Unit

ICBO

Collector cut-off current

IE= 0, VCB= 60 V

BD439

-

100

µA

IE= 0, VCB= 80 V

BD441

ICES

Collector cut-off current

VBE= 0, VCE= 60 V

BD439

-

100

VBE= 0, VCE= 80 V

BD441

IEBO

Emitter cut-offcurrent

IC= 0

VEB= 5 V

BD439

-

1

mA

BD441

VCEO(SUS)

Collector-Emitter

sustaning Voltage (*)

IB= 0

IC= 100 mA

BD439

60

-

V

BD441

80

-

VCE(SAT)

Collector-Emitter

saturation Voltage (*)

IC= 2 A

IB= 200 mA

BD439

-

0.8

V

BD441

VBE

Base-Emitter Voltage(*)

IC= 10 mA

VCE= 5 V

BD439

-

0.58

-

V

BD441

IC= 2 A

VCE= 1 V

BD439

-

1.5

V

BD441

hFE

DC Current Gain (*)

IC= 10 mA

VCE= 5 V

BD439

20

-

130

-

BD441

15

-

130

IC= 500 mA

VCE= 1 V

BD439

40

-

140

BD441

IC= 2 A

VCE= 1 V

BD439

25

-

BD441

15

-

fT

Transition frequency

IC= 250 mA

VCE= 1 V

BD439

3

-

MHz

BD441

(*) Measured under pulse conditions :tP <300µs, δ <1.5%

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