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2N5415 Datasheet(PDF) 2 Page - Comset Semiconductor |
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2N5415 Datasheet(HTML) 2 Page - Comset Semiconductor |
2 / 3 page PNP 2N5415 – 2N5416 21/09/2012 COMSET SEMICONDUCTORS 2/3 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) Min Typ Max Unit ICBO Collector Cutoff Current VCB = -175 V, IE =0 2N5415 - - -50 µA VCB = -280 V, IE =0 2N5416 IEBO Emitter Cutoff Current VEB = -4 V, IC =0 2N5415 - - -20 µA VEB = -6 V, IC =0 2N5416 VCEO Collector Emitter Breakdown Voltage (*) IC = -10 mA, IB =0 2N5415 -200 - - V 2N5416 -300 - - hFE DC Current Gain (*) IC = -50 mA VCE = -10 V 2N5415 30 - 150 - 2N5416 30 - 120 VCE(SAT) Collector-Emitter saturation Voltage (*) IC = -50 mA IB = -5 mA 2N5415 - - -2.5 V 2N5416 VBE Base-Emitter Voltage (*) IC = -50 mA VCE = -10 V 2N5415 - - -1.5 V 2N5416 fT Transition frequency IC = -10 mA VCE = -10 V, f = 5 MHz 2N5415 15 - - MHz 2N5416 Cc Collector Capacitance IE = ie = 0, VCB = -10 V f = 1 MHz 2N5415 - - 15 pF 2N5416 Ce Emitter Capacitance IC = ic = 0, VEB = -6 V f = 1 MHz 2N5415 - - 75 pF 2N5416 (*) Pulse conditions : tp < 300 µs, δ =1.5% |
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Similar Description - 2N5415 |
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