Electronic Components Datasheet Search
Selected language     English  ▼
Part Name
         Description


2N2102 Datasheet(PDF) 1 Page - Comset Semiconductor

Part No. 2N2102
Description  MEDIUM POWER AMPLIFIER & SWITCH
Download  3 Pages
Scroll/Zoom Zoom In 100% Zoom Out
Maker  COMSET [Comset Semiconductor]
Homepage  http://comset.halfin.com
Logo 

   
 1 page
background image
NPN 2N2102
COMSET SEMICONDUCTORS
1/3
MEDIUM POWER AMPLIFIER & SWITCH
The 2N2102 is a silicon Planar Epitaxial NPN transistor in Jedec TO-39 metal case.
They are intended for a wide variety of small-signall and medium power applications
in military and industrial equipments.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
Value
Unit
VCEO
Collector-Emitter Voltage (IB = 0)
65
V
VCBO
Collector-Base Voltage (IE = 0)
120
V
VCER
Collector-Emitter Voltage (RBE = 10 Ω)
80
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current
1
A
PD
Total Power Dissipation
Tamb= 25°C
1
W
Tcase= 25°C
5
TJ
Junction Temperature
-65 to 200
°C
TStg
Storage Temperature range
THERMAL CHARACTERISTICS
Symbol
Ratings
Value
Unit
RthJ-c
Thermal Resistance, Junction-case
35
°C/ W
Rthj-a
thermal resistance from junction to ambient in free air
175




Html Pages

1  2  3 


Datasheet Download




Link URL

Does ALLDATASHEET help your business so far?  [ DONATE ]  

About Alldatasheet   |   Advertisement   |   Datasheet Upload   |   Contact us   |   Privacy Policy   |   Bookmark   |   Link Exchange   |   Manufacturer List
All Rights Reserved© Alldatasheet.com 2003 - 2017    


Mirror Sites
English : Alldatasheet.com  , Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp  |   Russian : Alldatasheetru.com
Korean : Alldatasheet.co.kr   |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com  |   Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl