IRFH7446PBF datasheet(2/11 Pages) IRF

Part #	IRFH7446PBF

Description	HEXFETPower MOSFET

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Manufacturer	IRF [International Rectifier]

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IRFH7446PbF

October 23, 2012

2

Notes:

Calculated continuous current based on maximum allowable junction

temperature. Current is limited to 71A by source bond technology.

Note that current limitations arising from heating of the

device leads may occur with some lead mounting arrangements.

(Refer to AN-1140)

Repetitive rating; pulse width limited by max. junction

temperature.

Limited by TJmax, starting TJ = 25°C, L = 0.062mH

RG = 50, IAS = 50A, VGS =10V.

ISD  50A, di/dt  1123A/μs, VDD V(BR)DSS, TJ  150°C.

Pulse width  400μs; duty cycle  2%.

Coss eff. (TR) is a fixed capacitance that gives the same charging time

as Coss while VDS is rising from 0 to 80% VDSS.

Coss eff. (ER) is a fixed capacitance that gives the same energy as

Coss while VDS is rising from 0 to 80% VDSS.

When mounted on 1 inch square 2 oz copper pad on 1.5 x 1.5 in. board of

FR-4 material.

R is measured at TJ approximately 90°C.

This value determined from sample failure population,

starting TJ = 25°C, L= 0.062mH, RG = 50, IAS = 50A, VGS =10V.

Static @ TJ = 25°C (unless otherwise specified)

Symbol

Parameter

Min.

Typ.

Max. Units

V(BR)DSS

Drain-to-Source Breakdown Voltage

40

–––

V

V(BR)DSS/TJ

Breakdown Voltage Temp. Coefficient

–––

0.032

–––

V/°C

RDS(on)

Static Drain-to-Source On-Resistance

–––

2.5

3.3

m



–––

3.8

–––

m



VGS(th)

Gate Threshold Voltage

2.2

–––

3.9

V

IDSS

Drain-to-Source Leakage Current

–––

1.0

μA

–––

150

IGSS

Gate-to-Source Forward Leakage

–––

100

nA

Gate-to-Source Reverse Leakage

–––

-100

RG

Internal Gate Resistance

–––

1.5

–––



Conditions

VGS = 0V, ID = 250μA

Reference to 25°C, ID = 1.0mA d

VGS = 10V, ID = 50A g

VDS = VGS, ID = 100μA

VGS = 20V

VGS = -20V

VDS = 40V, VGS = 0V

VDS = 40V, VGS = 0V, TJ = 125°C

VGS = 6.0V, ID = 50A g

Absolute Maximum Ratings

Symbol

Parameter

Units

ID @ TC = 25°C

Continuous Drain Current, VGS @ 10V (Silicon Limited)

ID @ TC = 100°C

Continuous Drain Current, VGS @ 10V (Silicon Limited)

ID @ TC = 25°C

Continuous Drain Current, VGS @ 10V (Package Limited)

IDM

Pulsed Drain Current

d

PD @TC = 25°C

Maximum Power Dissipation

W

Linear Derating Factor

W/°C

VGS

Gate-to-Source Voltage

V

TJ

Operating Junction and

TSTG

Storage Temperature Range

Avalanche Characteristics

EAS (Thermally limited)

Single Pulse Avalanche Energy

e

mJ

EAS (tested)

Single Pulse Avalanche Energy Tested Value

l

IAR

Avalanche Current

Ãd

A

EAR

Repetitive Avalanche Energy

d

mJ

Thermal Resistance

Symbol

Parameter

Typ.

Max.

Units

RJC (Bottom)

Junction-to-Case

k

–––

1.6

RJC (Top)

Junction-to-Case

k

–––

31

RJA

Junction-to-Ambient

j

–––

35

RJA (<10s)

Junction-to-Ambient

j

–––

23

°C/W

A

°C

78

See Fig. 14, 15, 22a, 22b

78

Max.

117

74

468

85

153

-55 to + 150

± 20

0.63

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