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IRFH7446PBF Datasheet(PDF) 2 Page - International Rectifier |
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IRFH7446PBF Datasheet(HTML) 2 Page - International Rectifier |
2 / 11 page IRFH7446PbF www.irf.com © 2012 International Rectifier October 23, 2012 2 Notes: Calculated continuous current based on maximum allowable junction temperature. Current is limited to 71A by source bond technology. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. (Refer to AN-1140) Repetitive rating; pulse width limited by max. junction temperature. Limited by TJmax, starting TJ = 25°C, L = 0.062mH RG = 50, IAS = 50A, VGS =10V. ISD 50A, di/dt 1123A/μs, VDD V(BR)DSS, TJ 150°C.
Pulse width 400μs; duty cycle 2%. Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS. When mounted on 1 inch square 2 oz copper pad on 1.5 x 1.5 in. board of FR-4 material. R is measured at TJ approximately 90°C. This value determined from sample failure population, starting TJ = 25°C, L= 0.062mH, RG = 50, IAS = 50A, VGS =10V. Static @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units V(BR)DSS Drain-to-Source Breakdown Voltage 40 ––– ––– V V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 0.032 ––– V/°C RDS(on) Static Drain-to-Source On-Resistance ––– 2.5 3.3 m ––– 3.8 ––– m VGS(th) Gate Threshold Voltage 2.2 ––– 3.9 V IDSS Drain-to-Source Leakage Current ––– ––– 1.0 μA ––– ––– 150 IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA Gate-to-Source Reverse Leakage ––– ––– -100 RG Internal Gate Resistance ––– 1.5 ––– Conditions VGS = 0V, ID = 250μA Reference to 25°C, ID = 1.0mA d VGS = 10V, ID = 50A g VDS = VGS, ID = 100μA VGS = 20V VGS = -20V VDS = 40V, VGS = 0V VDS = 40V, VGS = 0V, TJ = 125°C VGS = 6.0V, ID = 50A g Absolute Maximum Ratings Symbol Parameter Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) IDM Pulsed Drain Current d PD @TC = 25°C Maximum Power Dissipation W Linear Derating Factor W/°C VGS Gate-to-Source Voltage V TJ Operating Junction and TSTG Storage Temperature Range Avalanche Characteristics EAS (Thermally limited) Single Pulse Avalanche Energy e mJ EAS (tested) Single Pulse Avalanche Energy Tested Value l IAR Avalanche Current Ãd A EAR Repetitive Avalanche Energy d mJ Thermal Resistance Symbol Parameter Typ. Max. Units RJC (Bottom) Junction-to-Case k ––– 1.6 RJC (Top) Junction-to-Case k ––– 31 RJA Junction-to-Ambient j ––– 35 RJA (<10s) Junction-to-Ambient j ––– 23 °C/W A °C 78 See Fig. 14, 15, 22a, 22b 78 Max. 117 74 468 85 153 -55 to + 150 ± 20 0.63 |
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