© 2009 Fairchild Semiconductor Corporation

www.fairchildsemi.com

KSC5305DF Rev. A3

1

September 2009

KSC5305DF

NPN Silicon Transistor

Features

• High Voltage High Speed Power Switch

Application

• Built-in Free-wheeling Diode makes efficient anti saturation operation

• Suitable for half bridge light ballast Applications

• Low base drive requirement

Thermal Characteristics

Symbol

Parameter

Value

Units

Collector Base Voltage

800

V

Collector Emitter Voltage

400

V

Emitter Base Voltage

12

V

Collector Current (DC)

5

A

*Collector Current (Pulse)

10

A

Base Current (DC)

2

A

*Base Current (Pulse)

4

A

40

W

Junction Temperature

150

°C

Storage Temperature range

-65 to +150

°C

Symbol

ParameterRating

Units

Thermal Resistance, Junction to Case

3.125

°C/W

Thermal Resistance, Junction to Ambient

69.5

°C/W

C

B

E

Equivalent Circuit

1

1.Base

2.Collector

3.Emitter

TO-220F