FDT86113LZ datasheet(2/6 Pages) FAIRCHILD

Part #	FDT86113LZ

Description	N-Channel PowerTrench짰 MOSFET 100 V, 3.3 A, 100 m

Download	6 Pages

Scroll/Zoom	100%

Manufacturer	FAIRCHILD [Fairchild Semiconductor]

Direct Link	http://www.fairchildsemi.com

Logo

2 / 6 page

FDT86113LZ Rev.C

www.fairchildsemi.com

2

Electrical Characteristics T

J = 25 °C unless otherwise noted

Off Characteristics

On Characteristics (Note 2)

Dynamic Characteristics

Switching Characteristics

Drain-Source Diode Characteristics

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

BVDSS

Drain to Source Breakdown Voltage

ID = 250 PA, VGS = 0 V

100

V

'BVDSS

'TJ

Breakdown Voltage Temperature

Coefficient

ID = 250 PA, referenced to 25 °C

71

mV/°C

IDSS

Zero Gate Voltage Drain Current

VDS = 80 V, VGS = 0 V

1

PA

IGSS

Gate to Source Leakage Current

VGS = ±20 V, VDS = 0 V

±10

PA

VGS(th)

Gate to Source Threshold Voltage

VGS = VDS, ID = 250 PA

1.0

1.7

2.5

V

'VGS(th)

'TJ

Gate to Source Threshold Voltage

Temperature Coefficient

ID = 250 PA, referenced to 25 °C

-5

mV/°C

rDS(on)

Static Drain to Source On Resistance

VGS = 10 V, ID = 3.3 A

75

100

m

:

VGS = 4.5 V, ID = 2.7 A

95

145

VGS = 10 V, ID = 3.3 A,

TJ = 125 °C

140

189

gFS

Forward Transconductance

VDS = 10 V, ID = 3.3 A

8

S

Ciss

Input Capacitance

VDS = 50 V, VGS = 0 V,

f = 1 MHz

234

315

pF

Coss

Output Capacitance

46

65

pF

Crss

Reverse Transfer Capacitance

3.1

5

pF

td(on)

Turn-On Delay Time

VDD = 50 V, ID = 3.3 A,

VGS = 10 V, RGEN = 6 :

3.8

10

ns

tr

Rise Time

1.3

10

ns

td(off)

Turn-Off Delay Time

10

20

ns

tf

Fall Time

1.5

10

ns

Qg

Total Gate Charge

VGS = 0 V to 10 V

VDD = 50 V,

ID = 3.3 A

4.1

6.8

nC

Qg

Total Gate Charge

VGS = 0 V to 5 V

2.3

3.9

nC

Qgs

Gate to Source Gate Charge

0.68

nC

Qgd

Gate to Drain “Miller” Charge

0.85

nC

VSD

Source to Drain Diode Forward Voltage

VGS = 0 V, IS = 3.3 A

(Note 2)

0.86

1.3

V

VGS = 0 V, IS = 1 A

(Note 2)

0.77

1.2

trr

Reverse Recovery Time

IF = 3.3 A, di/dt = 100 A/Ps

31

49

ns

Qrr

Reverse Recovery Charge

21

34

nC

Notes:

1. RTJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.

RTJC is guaranteed by design while RTJA is determined by the user’s board design.

2. Pulse Test: Pulse Width < 300

Ps, Duty cycle < 2.0%.

3. Starting TJ = 25°C, L = 0.3 mH, IAS = 8 A, VDD = 90 V, VGS = 10 V.

4. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.

55 °C/W when mounted on a

1 in2 pad of 2 oz copper

a)

118 °C/W when mounted on

a minimum pad of 2 oz copper

b)

Similar Part No. - FDT86113LZ

Manufacturer	Part #	Datasheet	Description
VBsemi Electronics Co.,...	FDT86113LZ	977Kb / 6P	N-Channel 100-V (D-S) MOSFET

More results

FDT86113LZ Datasheet(PDF) 2 Page - Fairchild Semiconductor

FDT86113LZ Datasheet(HTML) 2 Page - Fairchild Semiconductor

Similar Part No. - FDT86113LZ

Html Pages

1 2 3 4 5 6

Datasheet Download

Link URL