Electronic Components Datasheet Search |
|
FDT86113LZ Datasheet(PDF) 2 Page - Fairchild Semiconductor |
|
FDT86113LZ Datasheet(HTML) 2 Page - Fairchild Semiconductor |
2 / 6 page FDT86113LZ Rev.C www.fairchildsemi.com 2 Electrical Characteristics T J = 25 °C unless otherwise noted Off Characteristics On Characteristics (Note 2) Dynamic Characteristics Switching Characteristics Drain-Source Diode Characteristics Symbol Parameter Test Conditions Min Typ Max Units BVDSS Drain to Source Breakdown Voltage ID = 250 PA, VGS = 0 V 100 V 'BVDSS 'TJ Breakdown Voltage Temperature Coefficient ID = 250 PA, referenced to 25 °C 71 mV/°C IDSS Zero Gate Voltage Drain Current VDS = 80 V, VGS = 0 V 1 PA IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V ±10 PA VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 PA 1.0 1.7 2.5 V 'VGS(th) 'TJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250 PA, referenced to 25 °C -5 mV/°C rDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 3.3 A 75 100 m : VGS = 4.5 V, ID = 2.7 A 95 145 VGS = 10 V, ID = 3.3 A, TJ = 125 °C 140 189 gFS Forward Transconductance VDS = 10 V, ID = 3.3 A 8 S Ciss Input Capacitance VDS = 50 V, VGS = 0 V, f = 1 MHz 234 315 pF Coss Output Capacitance 46 65 pF Crss Reverse Transfer Capacitance 3.1 5 pF td(on) Turn-On Delay Time VDD = 50 V, ID = 3.3 A, VGS = 10 V, RGEN = 6 : 3.8 10 ns tr Rise Time 1.3 10 ns td(off) Turn-Off Delay Time 10 20 ns tf Fall Time 1.5 10 ns Qg Total Gate Charge VGS = 0 V to 10 V VDD = 50 V, ID = 3.3 A 4.1 6.8 nC Qg Total Gate Charge VGS = 0 V to 5 V 2.3 3.9 nC Qgs Gate to Source Gate Charge 0.68 nC Qgd Gate to Drain “Miller” Charge 0.85 nC VSD Source to Drain Diode Forward Voltage VGS = 0 V, IS = 3.3 A (Note 2) 0.86 1.3 V VGS = 0 V, IS = 1 A (Note 2) 0.77 1.2 trr Reverse Recovery Time IF = 3.3 A, di/dt = 100 A/Ps 31 49 ns Qrr Reverse Recovery Charge 21 34 nC Notes: 1. RTJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RTJC is guaranteed by design while RTJA is determined by the user’s board design. 2. Pulse Test: Pulse Width < 300 Ps, Duty cycle < 2.0%. 3. Starting TJ = 25°C, L = 0.3 mH, IAS = 8 A, VDD = 90 V, VGS = 10 V. 4. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. 55 °C/W when mounted on a 1 in2 pad of 2 oz copper a) 118 °C/W when mounted on a minimum pad of 2 oz copper b) |
Similar Part No. - FDT86113LZ |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.COM |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |