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FDT434P Datasheet(PDF) 3 Page - Fairchild Semiconductor |
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FDT434P Datasheet(HTML) 3 Page - Fairchild Semiconductor |
3 / 5 page Typical Characteristics 0 4 8 12 16 20 012345 -VDS, DRAIN-SOURCE VOLTAGE (V) -3.0V -1.5 V -2.5V -2.0V VGS = -4.5V 0 5 10 15 20 0.8 1 1.2 1.4 1.6 1.8 - I , DRAIN CURRENT (A) V = -2.5V GS D -4.5V -3.0V -4.0V -3.5V Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. -50 -25 0 25 50 75 100 125 150 0.6 0.8 1 1.2 1.4 1.6 T , JUNCTION TEMPERATURE (°C) V = - 4.5V GS I = - 6 A D J 12 345 0 0.03 0.06 0.09 0.12 0.15 - V , GATE TO SOURCE VOLTAGE (V) GS 25°C T =125°C A I = -6 A D Figure 3. On-Resistance Variation withTemperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 0.9 1.2 1.5 1.8 2.1 2.4 2.7 0 3 6 9 12 15 -V , GATE TO SOURCE VOLTAGE (V) V = -5V DS GS T = -55°C J 125°C 25°C 00.2 0.4 0.6 0.811.2 1.4 0.001 0.01 0.1 1 15 -V , BODY DIODE FORWARD VOLTAGE (V) 25°C -55°C V = 0V GS SD T = 125°C J Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. ©2011 Fairchild Semiconductor Corporation 3 www.fairchildsemi.com FDT434P Rev. C2 |
Similar Part No. - FDT434P_11 |
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Similar Description - FDT434P_11 |
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