FDMS86310 datasheet(4/7 Pages) FAIRCHILD

Part #	FDMS86310

Description	N-Channel PowerTrench짰 MOSFET 80 V, 50 A, 4.8 m廓

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Manufacturer	FAIRCHILD [Fairchild Semiconductor]

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4

FDMS86310 Rev. C

Figure 7.

0

102030

40506070

0

2

4

6

8

10

ID = 17 A

VDD = 30 V

VDD = 40 V

Qg, GATE CHARGE (nC)

VDD = 50 V

Gate Charge Characteristics

Figure 8.

0.1

1

10

100

5

10

100

1000

10000

f = 1 MHz

VGS = 0 V

VDS, DRAIN TO SOURCE VOLTAGE (V)

Crss

Coss

Ciss

Capacitance vs Drain

to Source Voltage

Figure9.

0.01

0.1

1

10

100 300

1

10

100

TJ = 100 oC

TJ = 25 oC

TJ = 125 oC

t

AV, TIME IN AVALANCHE (ms)

Unclamped Inductive

Switching Capability

Figure 10.

25

50

75

100

125

150

0

30

60

90

120

Limited by Package

VGS = 8 V

RθJC = 1.3

o

C/W

VGS = 10 V

T

C

, CASE TEMPERATURE (

o

C

)

Maximum Continuous Drain

Current vs Case Temperature

Figure 11.

0.01

0.1

1

10

100

400

0.01

0.1

1

10

100

200

10 s

10 ms

DC

1 s

100 ms

1 ms

VDS, DRAIN to SOURCE VOLTAGE (V)

THIS AREA IS

LIMITED BY r

DS(on)

SINGLE PULSE

TJ = MAX RATED

RθJA = 125

oC/W

TA = 25

oC

Forward Bias Safe

Operating Area

Figure 12. Single Pulse Maximum

Power Dissipation

10

-3

10

-2

10

-1

110

100

1000

0.5

1

10

100

1000

SINGLE PULSE

RθJA = 125

oC/W

TA = 25

o

C

t, PULSE WIDTH (sec)

Typical Characteristics TJ = 25 °C unless otherwise noted

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