FDMS7650_12 datasheet(1/7 Pages) FAIRCHILD

Part #	FDMS7650

Description	N-Channel PowerTrench짰 MOSFET 30 V, 100 A, 0.99 m廓

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Manufacturer	FAIRCHILD [Fairchild Semiconductor]

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January 2012

FDMS7650 Rev.D3

www.fairchildsemi.com

1

FDMS7650

N-Channel PowerTrench® MOSFET

30 V, 100 A, 0.99 m

Ω

Features

Max rDS(on) = 0.99 mΩ at VGS = 10 V, ID = 36 A

Max rDS(on) = 1.55 mΩ at VGS = 4.5 V, ID = 32 A

Advanced Package and Silicon combination for low rDS(on)

and high efficiency

MSL1 robust package design

100% UIL tested

RoHS Compliant

General Description

This N-Channel MOSFET has been designed specifically to

improve the overall efficiency and to minimize switch node

ringing of DC/DC converters using either synchronous or

conventional switching PWM controllers. It has been optimized

for low gate charge and extremely low rDS(on).

Applications

OringFET

Synchronous rectifier

Bottom

Top

Pin 1

S

G

S

D

G

S

D

5

6

7

8

3

2

1

4

Power 56

MOSFET Maximum Ratings T

C = 25 °C unless otherwise noted

Thermal Characteristics

Package Marking and Ordering Information

Symbol

Parameter

Ratings

Units

VDS

Drain to Source Voltage

30

V

VGS

Gate to Source Voltage

(Note 4)

±20

V

ID

Drain Current -Continuous (Package limited)

TC = 25 °C

100

A

-Continuous (Silicon limited)

TC = 25 °C

232

-Continuous

TA = 25 °C

(Note 1a)

36

-Pulsed

200

EAS

Single Pulse Avalanche Energy

(Note 3)

544

mJ

PD

Power Dissipation

TC = 25 °C

104

W

Power Dissipation

TA = 25 °C

(Note 1a)

2.5

TJ, TSTG

Operating and Storage Junction Temperature Range

-55 to +150

°C

RθJC

Thermal Resistance, Junction to Case

1.2

°C/W

RθJA

Thermal Resistance, Junction to Ambient

(Note 1a)

50

Device Marking

Device

Package

Reel Size

Tape Width

Quantity

FDMS7650

Power 56

13 ’’

12 mm

3000 units

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