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FDMS7606 Datasheet(PDF) 2 Page - Fairchild Semiconductor

Part # FDMS7606
Description  Dual N-Channel PowerTrench짰 MOSFET Q1: 30 V, 12 A, 11.4 m廓 Q2: 30 V, 22 A, 11.6 m廓
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Manufacturer  FAIRCHILD [Fairchild Semiconductor]
Direct Link  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDMS7606 Datasheet(HTML) 2 Page - Fairchild Semiconductor

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©2011 Fairchild Semiconductor Corporation
2
www.fairchildsemi.com
FDMS7606 Rev.C
Electrical Characteristics T
J = 25°C unless otherwise noted
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Symbol
Parameter
Test Conditions
Type
Min
Typ
Max
Units
BVDSS
Drain to Source Breakdown Voltage
ID = 250 μA, VGS = 0 V
Q1
Q2
30
30
V
ΔBV
DSS
ΔT
J
Breakdown Voltage Temperature
Coefficient
ID = 250 μA, referenced to 25°C
Q1
Q2
16
20
mV/°C
IDSS
Zero Gate Voltage Drain Current
VDS = 24 V, VGS = 0 V
Q1
Q2
1
1
μA
IGSS
Gate to Source Leakage Curent
VGS = 20 V, VDS = 0 V
VGS = ±20 V, VDS = 0 V
Q1
Q2
100
±100
nA
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250 μA
Q1
Q2
1.0
1.0
2.1
1.9
3.0
3.0
V
ΔV
GS(th)
ΔT
J
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250 μA, referenced to 25°C
Q1
Q2
-6
-5.5
mV/°C
rDS(on)
Static Drain to Source On Resistance
VGS = 10 V, ID = 11.5 A
VGS = 4.5 V, ID = 10 A
VGS = 10 V, ID = 11.5 A, TJ = 125°C
Q1
9.2
12.6
11.8
11.4
15.7
14.7
m
Ω
VGS = 10 V, ID = 12 A
VGS = 4.5 V, I= 9.5 A
VGS = 10 V, ID = 12 A, TJ = 125°C
Q2
9.7
12.8
12.3
11.6
17.2
15.4
gFS
Forward Transconductance
VDD = 5 V, ID = 11.5 A
VDD = 5 V, ID = 12 A
Q1
Q2
53
47
S
Ciss
Input Capacitance
Q1:
VDS = 15 V, VGS = 0 V, f = 1 MHZ
Q2:
VDS = 15 V, VGS = 0 V, f = 1 MHZ
Q1
Q2
1050
947
1400
1260
pF
Coss
Output Capacitance
Q1
Q2
295
191
395
255
pF
Crss
Reverse Transfer Capacitance
Q1
Q2
32
131
50
200
pF
Rg
Gate Resistance
Q1
Q2
0.2
0.2
1.6
1.0
4.0
2.5
Ω
td(on)
Turn-On Delay Time
Q1
VDD = 15 V, ID = 11.5 A, RGEN = 6 Ω
Q2
VDD = 15 V, ID = 12 A, RGEN = 6 Ω
Q1
Q2
7
6
14
12
ns
tr
Rise Time
Q1
Q2
3
3
10
10
ns
td(off)
Turn-Off Delay Time
Q1
Q2
18
19
33
34
ns
tf
Fall Time
Q1
Q2
3
3
10
10
ns
Qg(TOT)
Total Gate Charge
VGS = 0V to 10 V
Q1
VDD = 15 V,
ID = 11.5 A
Q1
Q2
16
19
22
27
nC
Qg(TOT)
Total Gate Charge
VGS = 0V to 5 V
Q1
Q2
8
10
11
15
nC
Qgs
Gate to Source Charge
Q2
VDD = 15 V,
ID = 12 A
Q1
Q2
3.2
2.6
nC
Qgd
Gate to Drain “Miller” Charge
Q1
Q2
2.0
4.2
nC


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