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FDMS3008SDC Datasheet(PDF) 7 Page - Fairchild Semiconductor |
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FDMS3008SDC Datasheet(HTML) 7 Page - Fairchild Semiconductor |
7 / 9 page www.fairchildsemi.com 7 ©2011 Fairchild Semiconductor Corporation FDMS3008SDC Rev.C SyncFET Schottky body diode Characteristics Fairchild’s SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 14 shows the reverse recovery characteristic of the FDMS3008SDC. Schottky barrier diodes exhibit significant leakage at high tem- perature and high reverse voltage. This will increase the power in the device. Figure 15. SyncFET body diode reverses leakage versus drain-source voltage 0 5 10 15 20 25 0.000001 0.00001 0.0001 0.001 0.01 TJ = 125 oC TJ = 100 oC TJ = 25 oC V DS, REVERSE VOLTAGE (V) Typical Characteristics (continued) Figure 14. FDMS3008SDC SyncFET body diode reverse recovery characteristic 0 50 100 150 200 250 300 -5 0 5 10 15 20 25 30 di/dt = 300 A/μs TIME (ns) |
Similar Part No. - FDMS3008SDC |
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Similar Description - FDMS3008SDC |
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