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©2011 Fairchild Semiconductor Corporation

FDMS3008SDC Rev.C

SyncFET Schottky body diode

Characteristics

Fairchild’s SyncFET process embeds a Schottky diode in parallel

with

PowerTrench

MOSFET.

This

diode

exhibits

similar

characteristics to a discrete external Schottky diode in parallel

with a MOSFET. Figure 14 shows the reverse recovery

characteristic of the FDMS3008SDC.

Schottky barrier diodes exhibit significant leakage at high tem-

perature and high reverse voltage. This will increase the power

in the device.

Figure 15. SyncFET body diode reverses

leakage versus drain-source voltage

0

5

10

15

20

25

0.000001

0.00001

0.0001

0.001

0.01

V

Figure 14. FDMS3008SDC SyncFET body

diode reverse recovery characteristic

0

50

100

150

200

250

300

-5

0

5

10

15

20

25

30

TIME (ns)