FDMQ8203 datasheet(4/10 Pages) FAIRCHILD

Part #	FDMQ8203

Description	GreenBridgeTM Series of High-Efficiency Bridge Rectifiers Dual N-Channel and Dual P-Channel PowerTrench짰 MOSFET N-Channel: 100 V, 6 A, 110 m廓 P-Channel: -80 V, -6 A, 190 m廓

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Manufacturer	FAIRCHILD [Fairchild Semiconductor]

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FDMQ8203 Rev.C1

www.fairchildsemi.com

4

Typical Characteristics (N-Channel) T

J = 25 °C unless otherwise noted

Figure 1.

0

1

23

45

0

3

6

9

12

V

GS = 7 V

V

GS = 10 V

V

DS, DRAIN TO SOURCE VOLTAGE (V)

V

GS = 5 V

V

GS = 6 V

V

GS = 8 V

PULSE DURATION = 80 μs

DUTY CYCLE = 0.5% MAX

On Region Characteristics

Figure 2.

0

369

12

0

1

2

3

4

5

V

GS = 8 V

V

GS = 10 V

V

GS = 7 V

PULSE DURATION = 80 μs

DUTY CYCLE = 0.5% MAX

ID, DRAIN CURRENT (A)

V

GS = 6 V

V

GS = 5 V

Normalized On-Resistance

vs Drain Current and Gate Voltage

Figure 3. Normalized On Resistance

-75

-50

-25

0

25

50

75

100

125

150

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

ID = 3 A

VGS = 10 V

TJ, JUNCTION TEMPERATURE (

oC

)

vs Junction Temperature

Figure 4.

45

6

7

8

9

10

0

100

200

300

400

TJ = 125 oC

ID = 3 A

TJ = 25 oC

VGS, GATE TO SOURCE VOLTAGE (V)

PULSE DURATION = 80 μs

DUTY CYCLE = 0.5% MAX

On-Resistance vs Gate to

Source Voltage

Figure 5. Transfer Characteristics

23

45

6

7

0

3

6

9

12

TJ = 150 oC

VDS = 5 V

PULSE DURATION = 80 μs

DUTY CYCLE = 0.5% MAX

TJ = -55 oC

TJ = 25 oC

VGS, GATE TO SOURCE VOLTAGE (V)

Figure 6.

0.2

0.4

0.6

0.8

1.0

1.2

0.001

0.01

0.1

1

10

20

TJ = -55 oC

TJ = 25 oC

TJ = 150 oC

VGS = 0 V

VSD, BODY DIODE FORWARD VOLTAGE (V)

Source to Drain Diode

Forward Voltage vs Source Current

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