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FDD86102 Datasheet(PDF) 4 Page - Fairchild Semiconductor |
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FDD86102 Datasheet(HTML) 4 Page - Fairchild Semiconductor |
4 / 6 page FDD86102 Rev.C5 www.fairchildsemi.com 4 Figure 7. 03 6 9 12 15 0 2 4 6 8 10 ID = 8 A VDD = 50 V VDD = 25 V Qg, GATE CHARGE (nC) VDD = 75 V Gate Charge Characteristics Figure8. 0.1 1 10 100 10 100 1000 f = 1 MHz VGS = 0 V VDS, DRAIN TO SOURCE VOLTAGE (V) Crss Coss Ciss CapacitancevsDrain to Source Voltage Figure9. 0.001 0.01 0.1 1 10 30 1 10 50 TJ = 100 oC TJ = 25 oC TJ = 125 oC t AV, TIME IN AVALANCHE (ms) UnclampedInductive Switching Capability Figure 10. 25 50 75 100 125 150 0 10 20 30 40 RθJC = 2 oC/W VGS = 6 V VGS = 10 V T c, CASE TEMPERATURE ( oC) Maximum Continuous Drain Current vs Case Temperature Figure 11. Forward Bias Safe Operating Area 0.1 1 10 100 300 0.1 1 10 100 DC 10 ms 1 ms 100 us VDS, DRAIN to SOURCE VOLTAGE (V) THIS AREA IS LIMITED BY r DS(on) SINGLE PULSE TJ = MAX RATED RθJC = 2 oC/W TC = 25 oC Figure 12. 10 -5 10 -4 10 -3 10 -2 10 -1 1 10 50 100 1000 10000 t, PULSE WIDTH (sec) SINGLE PULSE RθJC = 2 oC/W TC = 25 oC Single Pulse Maximum Power Dissipation Typical Characteristics T J = 25 °C unless otherwise noted |
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