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D44C8 Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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D44C8 Datasheet(HTML) 1 Page - Fairchild Semiconductor |
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1 / 3 page  © 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com D44C8 Rev. B2 1 January 2010 D44C8 NPN Power Amplifier • Sourced from process 4P. Absolute Maximum Ratings T A=25°C unless otherwise noted Electrical Characteristics T A=25°C unless otherwise noted Thermal Characteristics T A=25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 60 V IC Collector Current - Continuous 4.0 A TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C Symbol Parameter Test Condition Min. Typ. Max. Units Off Characteristics V(BR)CEO Collector-Emitter Breakdown Voltage IC = 100mA, IB = 0 60 V ICES Collector-Emitter-(Base)Short VCE = 70V, IE = 0 10 μA IEBO Emitter-Cutoff Current VEB = 5.0V, IB = 0 100 μA On Characteristics hFE DC Current Gain VCE = 1.0V, IC = 0.2A VCE = 1.0V, IC = 2.0A 40 20 120 VCE (sat) Collector-Emitter Saturation Voltage IC = 1.0A, IB = 50mA 0.5 V VBE (sat) Base-Emitter Saturation Voltage IC = 1.0A, IB = 100mA 1.3 V Small Signal Characteristics Cob Output Capacitance VCB = 10V, f = 1.0MHz 100 pF fT Current Gain Bandwidth Product IC = 20mA, VCE = 4.0V 40 MHz tON td, Delay Time tr , Rise Time IC = 1.0A, IB1 = IB2 = 0.1A, VCC = 30V, tp = 25μs 54 490 ns tOFF ts , Storage Time tf , Fall Time 636 59 ns Symbol Parameter Max. Units PD Total Device Dissipation Derate above 25 °C 60 480 W mW/ °C RθJC Thermal Resistance, Junction to Case 2.1 °C/W RθJA Thermal Resistance, Junction to Ambient 62.5 °C/W 1 TO-220 1. Base 2. Collector 3. Emitter |
Similar Part No. - D44C8_10 |
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Similar Description - D44C8_10 |
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