© 2011 Fairchild Semiconductor Corporation

www.fairchildsemi.com

2N7002KW Rev. A0

1

May 2011

2N7002KW

N-Channel Enhancement Mode Field Effect Transistor

Features

• Low On-Resistance

• Low Gate Threshold Voltage

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• Ultra-Small Surface Mount Package

• Pb Free/RoHS Compliant

• ESD HBM=1000V as per JESD22 A114 and ESD CDM=1500V as per JESD22 C101

* These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.

Thermal Characteristics

* Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. Minimum land pad size

Symbol

Parameter

Value

Units

Drain-Source Voltage

60

V

Gate-Source Voltage

±20

V

Maximum Drain Current

- Continuous

- Pulsed

310

195

1.2

mA

mA

A

Operating Junction Temperature Range

-55 to +150

°C

Storage Temperature Range

-55 to +150

°C

Symbol

Parameter

Value

Units

Total Device Dissipation

300

2.4

mW

mW/

°C

Thermal Resistance, Junction to Ambient *

410

°C/W

Marking : 7KW

G

S

SOT-323

D