DMG7430LFG datasheet(5/7 Pages) DIODES

Part #	DMG7430LFG

Description	This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

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Manufacturer	DIODES [Diodes Incorporated]

Direct Link	http://www.diodes.com

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5 / 7 page

DMG7430LFG

Document number: DS35497 Rev. 5 - 2

5 of 7

www.diodes.com

February 2012

DMG7430LFG

POWERDI is a registered trademark of Diodes Incorporated

0

0.01

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-50

-25

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T , JUNCTION TEMPERATURE ( C)

Fig. 10 On-Resistance Variation with Temperature

J

°

V

= 4.5V

I= 10A

GS

D

V=

V

I= 20A

GS

D

10

0

0.5

1.0

1.5

2.0

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-50

-25

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T , JUNCTION TEMPERATURE ( C)

Fig. 11 Gate Threshold Variation vs. Ambient Temperature

J

°

I= 1mA

D

I = 250µA

D

0

5

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30

0

0.2

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1.2

V

, SOURCE-DRAIN VOLTAGE (V)

SD

Fig.12 Diode Forward Voltage vs. Current

T= 25°C

A

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1,000

1,200

1,400

1,600

1,800

2,000

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V

, DRAIN-SOURCE VOLTAGE (V)

DS

Fig. 13 Typical Junction Capacitance

Ciss

Coss

C

rss

f = 1MHz

010

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3040

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7080

90 100

V

, DRAIN-SOURCE VOLTAGE (V)

DS

Fig. 14 Typical Drain-Source Leakage Current vs. Voltage

1

10

100

1,000

10,000

T = 25°C

A

T = 85°C

A

T = 125°C

A

T = 150°C

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Q

(nC)

g, TOTAL GATE CHARGE

Fig. 15 Gate Charge

V

= 15V

I=

A

DS

D

12

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