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UD6006 Datasheet(PDF) 2 Page - ShenZhen XinDeYi Electronics Co., Ltd. |
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UD6006 Datasheet(HTML) 2 Page - ShenZhen XinDeYi Electronics Co., Ltd. |
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2 / 4 page  2 N-Ch 60V Fast Switching MOSFETs Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 60 --- --- V △ BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=1mA --- 0.057 --- V/℃ RDS(ON) Static Drain-Source On-Resistance 2 VGS=10V , ID=20A --- 14 18 m Ω VGS=4.5V , ID=10A --- 16 20 VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 1.2 --- 2.5 V △ VGS(th) VGS(th) Temperature Coefficient --- -5.68 --- mV/℃ IDSS Drain-Source Leakage Current VDS=48V , VGS=0V , TJ=25℃ --- --- 1 uA VDS=48V , VGS=0V , TJ=55℃ --- --- 5 IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ± 100 nA gfs Forward Transconductance VDS=5V , ID=15A --- 45 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 1.7 3.4 Ω Qg Total Gate Charge (4.5V) VDS=48V , VGS=4.5V , ID=15A --- 19.3 27 nC Qgs Gate-Source Charge --- 7.1 10 Qgd Gate-Drain Charge --- 7.6 10.6 Td(on) Turn-On Delay Time VDD=30V , VGS=10V , RG=3.3Ω, ID=15A --- 7.2 14.4 ns Tr Rise Time --- 50 90 Td(off) Turn-Off Delay Time --- 36.4 73 Tf Fall Time --- 7.6 15.2 Ciss Input Capacitance VDS=15V , VGS=0V , f=1MHz --- 2423 3392 pF Coss Output Capacitance --- 145 203 Crss Reverse Transfer Capacitance --- 97 136 Symbol Parameter Conditions Min. Typ. Max. Unit EAS Single Pulse Avalanche Energy 5 VDD=25V , L=0.1mH , IAS=15A 19 --- --- mJ Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current 1,6 VG=VD=0V , Force Current --- --- 35 A ISM Pulsed Source Current 2,6 --- --- 80 A VSD Diode Forward Voltage 2 VGS=0V , IS=A , TJ=25℃ --- --- 1 V trr Reverse Recovery Time IF=15A , dI/dt=100A/µs , TJ=25℃ --- 16.3 --- nS Qrr Reverse Recovery Charge --- 11 --- nC Note : 1.The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=28A 4.The power dissipation is limited by 150℃ junction temperature 5.The Min. value is 100% EAS tested guarantee. 6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Guaranteed Avalanche Characteristics Diode Characteristics UD6006 |
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