Publication Date : Oct．2011

1

INDEX MARK

[Gate]

Terminal No.

(a)Drain [output]

(b)Source [GND]

(c)Gate [input]

(d)Source

(b)

(b)

0.95+/-0.2

2.6+/-0.2

7.0+/-0.2

(c)

(a)

8.0+/-0.2

NOTES:

1. ( ) Typical value

UNIT:mm

(d)

0.2+/-0.05

TOP VIEW

SIDE VIEW

BOTTOM VIEW

SIDE VIEW

(4.5)

DETAIL A

DETAIL A

RD12MVP1

RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 10W

DESCRIPTION

RD12MVP1 is a MOS FET type transistor

specifically designed for VHF RF power

amplifiers applications.

FEATURES

•High Power Gain

Pout>10W, Gp>13dB@Vdd=7.2V,f=175MHz

•High Efficiency: 55%min. (175MHz)

•No gate protection diode

APPLICATION

For output stage of high power amplifiers in

VHF band mobile radio sets.

RoHS COMPLIANT

RD12MVP1 is a RoHS compliant product. RoHS compliance is indicating by the letter “G” after the Lot Marking.

This product includes the lead in high melting temperature type solders.

However, it is applicable to the following exceptions of RoHS Directions.

1.Lead in high melting temperature type solders (i.e. tin-lead older alloys containing more than85% lead.)

ABSOLUTE MAXIMUM RATINGS

(Tc=25°C, UNLESS OTHERWISE NOTED)

SYMBOL

PARAMETER

CONDITIONS

RATINGS

UNIT

Drain to Source Voltage

50

V

Gate to Source Voltage

-5 to +20

V

ID

Drain Current

4.0

A

Pin

Input Power

1.0

W

Pch

Channel Dissipation

125

W

Tj

Junction Temperature

+150

°C

Tstg

Storage Temperature

-40 to +125

°C

Rthj-c

Thermal Resistance

Junction to Case

1.5

°C/W

Note: Above parameters are guaranteed independently.

OUTLINE DRAWING