RD07MUS2B

RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz,7W

Publication Date : Oct．2011

9

TEST CIRCUIT(f=135-175MHz)

TEST CIRCUIT(f=450-527MHz)

100pF

140pF

RF-in

3.5mm

22pF

W

4.7K ohm

C1

W

C2

22μF,50V

20pF

7.5mm

1.5mm

4.5mm

21mm

5mm

9.5mm

2.2 ohm

7.5mm

L1

3.5mm

21mm

2.5mm

62pF

RF-OUT

Vgg

Vdd

RD07MUS2B

(f=135-175MHz)

L1,L2:Enameled wire 6 Turns,D:0.23mm,1.66mm O.D

L3,L5:Enameled wire 2 Turns,D:0.23mm,1.66mm O.D

L4

:Enameled wire 4 Turns,D:0.43mm,1.66mm O.D

C1,C2:1000pF,0.0022μF in parallel

Note:Board material Glass-Epoxy substrate

Micro strip line width=1.3mm/50 ohm,er:4.8,t=0.8mm

W:line width=1.0mm

43pF

100pF

L5

L4

5.5mm

3mm

22pF

L3

1mm

3mm

3mm

L2

2.5mm

100pF

12pF

RF-in

4mm

24pF

W

4.7K ohm

C2

22μF,50V

8pF

0.5mm

10mm

4mm

21mm

5mm

1mm

3mm

L1

2.5mm

21mm

5.5mm

100pF

RF-OUT

Vgg

Vdd

RD07MUS2B

(f=450-527MHz)

L1:Enameled wire 5 Turns,D:0.43mm,2.46mm O.D

L2:Enameled wire 2 Turns,D:0.23mm,1.66mm O.D

C1,C2:1000pF,0.0022μF in parallel

Note:Board material Glass-Epoxy substrate

Micro strip line width=1.3mm/50 ohm,er:4.8,t=0.8mm

W:line width=1.0mm

8pF

9pF

24pF

4.5mm

6mm

L2

7.5mm

C1

5.5mm

1mm

8pF

12pF

54pF

W