<Silicon RF Power Modules >

RA55H4047M

RoHS Compliance , 400-470MHz 55W 12.5V, 3 Stage Amp. For MOBILE RADIO

Publication Date : Oct.2011

8

Output Power Control:

Depending on linearity, the following two methods are recommended to control the output power:

a) Non-linear FM modulation:

When the gate voltage is close to zero, the RF input signal is attenuated up to 60 dB and only a small leakage current flows from

the battery into the drain.

b) Linear AM modulation:

Oscillation:

To test RF characteristics, this module is put on a fixture with two bias decoupling capacitors each on gate and drain, a 4.700 pF chip

capacitor, located close to the module, and a 22 µF (or more) electrolytic capacitor.

When an amplifier circuit around this module shows oscillation, the following may be checked:

a) Do the bias decoupling capacitors have a low inductance pass to the case of the module?

ATTENTION:

1.High Temperature; This product might have a heat generation while operation,Please take notice that have a possibility to receive a

burn to touch the operating product directly or touch the product until cold after switch off.

At the near the product,do not place the combustible material that have possibilities to arise the fire.

2. Generation of High Frequency Power; This product generate a high frequency power. Please take notice that do not leakage the

unnecessary electric wave and use this products without cause damage for human and property per normal operation.

3. Before use; Before use the product,Please design the equipment in consideration of the risk for human and electric wave obstacle

for equipment.

PRECAUTION FOR THE USE OF MITSUBISHI SILICON RF POWER AMPLIFIER DEVICES:

1.The specifications of mention are not guarantee values in this data sheet. Please confirm additional details regarding operation of

these products from the formal specification sheet. For copies of the formal specification sheets, please contact one of our sales

offices.

2.RA series products (RF power amplifier modules) and RD series products (RF power transistors) are designed for consumer mobile

communication terminals and were not specifically designed for use in other applications.

In particular, while these products are highly reliable for their designed purpose, they are not manufactured under a quality

assurance testing protocol that is sufficient to guarantee the level of reliability typically deemed necessary for critical communications

elements. In the application, which is base station applications and fixed station applications that operate with long term continuous

transmission and a higher on-off frequency during transmitting, please consider the derating, the redundancy system, appropriate

setting of the maintain period and others as needed. For the reliability report which is described about predicted operating life time of

Mitsubishi Silicon RF Products , please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product

3.RA series products use MOSFET semiconductor technology. They are sensitive to ESD voltage therefore appropriate ESD

precautions are required.

4.In order to maximize reliability of the equipment, it is better to keep the devices temperature low. It is recommended to utilize a

sufficient sized heat-sink in conjunction with other cooling methods as needed (fan, etc.) to keep the case temperature for RA series

products lower than 60deg/C under standard conditions, and less than 90deg/C under extreme conditions.

5.RA series products are designed to operate into a nominal load impedance of 50 ohms. Under the condition of operating into a severe

high load VSWR approaching an open or short, an over load condition could occur. In the worst case there is risk for burn out of the

transistors and burning of other parts including the substrate in the module.

6.The formal specification includes a guarantee against parasitic oscillation under a specified maximum load mismatch condition. The

inspection for parasitic oscillation is performed on a sample basis on our manufacturing line. It is recommended that verification of no

parasitic oscillation be performed at the completed equipment level also.

7.For specific precautions regarding assembly of these products into the equipment, please refer to the supplementary items in the

specification sheet.

8.Warranty for the product is void if the products protective cap (lid) is removed or if the product is modified in any way from it’s original

form.

9.For additional “Safety first” in your circuit design and notes regarding the materials, please refer the last page of this data sheet.

10. Please refer to the additional precautions in the formal specification sheet.