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RA13H8891MB Datasheet(PDF) 5 Page - Mitsubishi Electric Semiconductor |
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RA13H8891MB Datasheet(HTML) 5 Page - Mitsubishi Electric Semiconductor |
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5 / 9 page  < Silicon RF Power Modules > RA13H8891MB RoHS Compliance, 880-915MHz 13W 12.5V, 3 Stage Amp. For MOBILE RADIO Publication Date : Oct．2011 5 1 RF Input (Pin) 2 Gate Voltage (VGG) 3 Drain Voltage (VDD) 4 RF Output (Pout) 5 RF Ground (Case) OUTLINE DRAWING (mm) 51.3±1 60.5±1 57.5±0.5 50.4±1 43.3±1 0.45 Area [A] 21.3±1 8.3±1 Expansion figure of area [A] 2-R1.6±0.2 1 2 3 4 5 (49.5) |
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